Найдено: 8
Наименование Описание Производитель
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Тип корпуса
Резистор базы (R1)
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Резистор эмиттер-база (R2)
Package / Case
PBRN113ES,126 TRANS PREBIAS NPN 0.7W TO92-3 NXP USA Inc. 800mA 40V 700mW Through Hole NPN - Pre-Biased TO-92-3 1kOhms 1.15V @ 8mA, 800mA 500nA 180 @ 300mA, 5V 1kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PBRP123YS,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 800mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 2.2kOhms 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PBRP113ZS,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 800mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 1kOhms 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PBRP123ES,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 800mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 2.2kOhms 2.2kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PBRN123YS,126 TRANS PREBIAS NPN 0.7W TO92-3 NXP USA Inc. 800mA 40V 700mW Through Hole NPN - Pre-Biased TO-92-3 2.2kOhms 1.15V @ 8mA, 800mA 500nA 500 @ 300mA, 5V 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PBRN113ZS,126 TRANS PREBIAS NPN 0.7W TO92-3 NXP USA Inc. 800mA 40V 700mW Through Hole NPN - Pre-Biased TO-92-3 1kOhms 1.15V @ 8mA, 800mA 500nA 500 @ 300mA, 5V 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PBRP113ES,126 TRANS PREBIAS PNP 500MW TO92-3 NXP USA Inc. 800mA 50V 500mW Through Hole PNP - Pre-Biased TO-92-3 1kOhms 1kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PBRN123ES,126 TRANS PREBIAS NPN 0.7W TO92-3 NXP USA Inc. 800mA 40V 700mW Through Hole NPN - Pre-Biased TO-92-3 2.2kOhms 1.15V @ 8mA, 800mA 500nA 280 @ 300mA, 5V 2.2kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)