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- Напряжение насыщения (макс) @ Ib, Ic
- Обратный ток коллектора
- Усиление по току (hFE)
- Граничная частота
- Резистор эмиттер-база (R2)
- Package / Case
- Серия
Наименование | Описание | Производитель
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Ток коллектора (макс)
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Граничное напряжение КЭ(макс)
|
Мощность - Макс.
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Вид монтажа
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Тип транзистора
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Тип корпуса
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Резистор базы (R1)
|
Напряжение насыщения (макс) @ Ib, Ic
|
Обратный ток коллектора
|
Усиление по току (hFE)
|
Резистор эмиттер-база (R2)
|
Package / Case
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PDTB123YS,126 | TRANS PREBIAS PNP 500MW TO92-3 | NXP USA Inc. | 500mA | 50V | 500mW | Through Hole | PNP - Pre-Biased | TO-92-3 | 2.2kOhms | 300mV @ 2.5mA, 50mA | 500nA | 70 @ 50mA, 5V | 10kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
PDTD123TS,126 | TRANS PREBIAS NPN 500MW TO92-3 | NXP USA Inc. | 500mA | 50V | 500mW | Through Hole | NPN - Pre-Biased | TO-92-3 | 2.2kOhms | 300mV @ 2.5mA, 50mA | 500nA | 100 @ 50mA, 5V | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
PDTB123ES,126 | TRANS PREBIAS PNP 500MW TO92-3 | NXP USA Inc. | 500mA | 50V | 500mW | Through Hole | PNP - Pre-Biased | TO-92-3 | 2.2kOhms | 300mV @ 2.5mA, 50mA | 500nA | 40 @ 50mA, 5V | 2.2kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
PDTD113ZS,126 | TRANS PREBIAS NPN 500MW TO92-3 | NXP USA Inc. | 500mA | 50V | 500mW | Through Hole | NPN - Pre-Biased | TO-92-3 | 1kOhms | 300mV @ 2.5mA, 50mA | 500nA | 70 @ 50mA, 5V | 10kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
PDTD123YS,126 | TRANS PREBIAS NPN 500MW TO92-3 | NXP USA Inc. | 500mA | 50V | 500mW | Through Hole | NPN - Pre-Biased | TO-92-3 | 2.2kOhms | 300mV @ 2.5mA, 50mA | 500nA | 70 @ 50mA, 5V | 10kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
PDTD123ES,126 | TRANS PREBIAS NPN 500MW TO92-3 | NXP USA Inc. | 500mA | 50V | 500mW | Through Hole | NPN - Pre-Biased | TO-92-3 | 2.2kOhms | 300mV @ 2.5mA, 50mA | 500nA | 40 @ 50mA, 5V | 2.2kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
PDTD113ES,126 | TRANS PREBIAS NPN 500MW TO92-3 | NXP USA Inc. | 500mA | 50V | 500mW | Through Hole | NPN - Pre-Biased | TO-92-3 | 1kOhms | 300mV @ 2.5mA, 50mA | 500nA | 33 @ 50mA, 5V | 1kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
PDTB113ZS,126 | TRANS PREBIAS PNP 500MW TO92-3 | NXP USA Inc. | 500mA | 50V | 500mW | Through Hole | PNP - Pre-Biased | TO-92-3 | 1kOhms | 300mV @ 2.5mA, 50mA | 500nA | 70 @ 50mA, 5V | 10kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
PDTB113ES,126 | TRANS PREBIAS PNP 500MW TO92-3 | NXP USA Inc. | 500mA | 50V | 500mW | Through Hole | PNP - Pre-Biased | TO-92-3 | 1kOhms | 300mV @ 2.5mA, 50mA | 500nA | 33 @ 50mA, 5V | 1kOhms | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
PDTB123TS,126 | TRANS PREBIAS PNP 500MW TO92-3 | NXP USA Inc. | 500mA | 50V | 500mW | Through Hole | PNP - Pre-Biased | TO-92-3 | 2.2kOhms | 300mV @ 2.5mA, 50mA | 500nA | 100 @ 50mA, 5V | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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