Найдено: 6
Наименование Описание Производитель
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Тип корпуса
Резистор базы (R1)
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
Резистор эмиттер-база (R2)
Package / Case
DTB113ZSTP TRANS PREBIAS PNP 300MW SPT Rohm Semiconductor 500mA 50V 300mW Through Hole PNP - Pre-Biased SPT 1kOhms 300mV @ 2.5mA, 50mA 500nA 56 @ 50mA, 5V 200MHz 10kOhms SC-72 Formed Leads
DTB143ESTP TRANS PREBIAS PNP 300MW SPT Rohm Semiconductor 500mA 50V 300mW Through Hole PNP - Pre-Biased SPT 4.7kOhms 300mV @ 2.5mA, 50mA 500nA 47 @ 50mA, 5V 200MHz 4.7kOhms SC-72 Formed Leads
DTD114ESTP TRANS PREBIAS NPN 300MW SPT Rohm Semiconductor 500mA 50V 300mW Through Hole NPN - Pre-Biased SPT 10kOhms 300mV @ 2.5mA, 50mA 500nA 56 @ 50mA, 5V 200MHz 10kOhms SC-72 Formed Leads
DTD123TSTP TRANS PREBIAS NPN 300MW SPT Rohm Semiconductor 500mA 40V 300mW Through Hole NPN - Pre-Biased SPT 2.2kOhms 300mV @ 2.5mA, 50mA 500nA (ICBO) 100 @ 50mA, 5V 200MHz SC-72 Formed Leads
DTB123ESTP TRANS PREBIAS PNP 300MW SPT Rohm Semiconductor 500mA 50V 300mW Through Hole PNP - Pre-Biased SPT 2.2kOhms 300mV @ 2.5mA, 50mA 500nA 39 @ 50mA, 5V 200MHz 2.2kOhms SC-72 Formed Leads
DTB113ESTP TRANS PREBIAS PNP 300MW SPT Rohm Semiconductor 500mA 50V 300mW Through Hole PNP - Pre-Biased SPT 1kOhms 300mV @ 2.5mA, 50mA 500nA 33 @ 50mA, 5V 200MHz 1kOhms SC-72 Formed Leads