• Напряжение насыщения (макс) @ Ib, Ic
    • Обратный ток коллектора
    • Усиление по току (hFE)
    • Граничная частота
    • Резистор эмиттер-база (R2)
    • Package / Case
    • Серия
  • 10
  • 15
  • 50
  • 100
Списком Таблицей
Найдено: 14
Наименование Описание Производитель
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Тип корпуса
Резистор базы (R1)
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
Резистор эмиттер-база (R2)
Package / Case
RN2426(TE85L,F) TRANS PREBIAS PNP 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount PNP - Pre-Biased S-Mini 1kOhms 250mV @ 1mA, 50mA 500nA 90 @ 100mA, 1V 200MHz 10kOhms TO-236-3, SC-59, SOT-23-3
RN2424(TE85L,F) TRANS PREBIAS PNP 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount PNP - Pre-Biased S-Mini 10kOhms 250mV @ 1mA, 50mA 500nA 90 @ 100mA, 1V 200MHz 10kOhms TO-236-3, SC-59, SOT-23-3
RN2425(TE85L,F) TRANS PREBIAS PNP 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount PNP - Pre-Biased S-Mini 250mV @ 1mA, 50mA 500nA 90 @ 100mA, 1V 200MHz 10kOhms TO-236-3, SC-59, SOT-23-3
RN1424TE85LF TRANS PREBIAS NPN 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount NPN - Pre-Biased S-Mini 10kOhms 250mV @ 1mA, 50mA 500nA 90 @ 100mA, 1V 300MHz 10kOhms TO-236-3, SC-59, SOT-23-3
RN2427TE85LF TRANS PREBIAS PNP 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount PNP - Pre-Biased S-Mini 2.2kOhms 250mV @ 1mA, 50mA 500nA 90 @ 100mA, 1V 200MHz 10kOhms TO-236-3, SC-59, SOT-23-3
RN1425TE85LF TRANS PREBIAS NPN 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount NPN - Pre-Biased S-Mini 470Ohms 250mV @ 1mA, 50mA 500nA 90 @ 100mA, 1V 300MHz 10kOhms TO-236-3, SC-59, SOT-23-3
RN1423TE85LF TRANS PREBIAS NPN 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount NPN - Pre-Biased S-Mini 4.7kOhms 250mV @ 1mA, 50mA 500nA 70 @ 100mA, 1V 300MHz 4.7kOhms TO-236-3, SC-59, SOT-23-3
RN1422TE85LF TRANS PREBIAS NPN 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount NPN - Pre-Biased S-Mini 2.2kOhms 250mV @ 1mA, 50mA 500nA 65 @ 100mA, 1V 300MHz 2.2kOhms TO-236-3, SC-59, SOT-23-3
RN2422TE85LF TRANS PREBIAS PNP 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount PNP - Pre-Biased S-Mini 2.2kOhms 250mV @ 1mA, 50mA 500nA 65 @ 100mA, 1V 200MHz 2.2kOhms TO-236-3, SC-59, SOT-23-3
RN1427TE85LF TRANS PREBIAS NPN 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount NPN - Pre-Biased S-Mini 2.2kOhms 250mV @ 1mA, 50mA 500nA 90 @ 100mA, 1V 300MHz 10kOhms TO-236-3, SC-59, SOT-23-3
RN1421TE85LF TRANS PREBIAS NPN 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount NPN - Pre-Biased S-Mini 1kOhms 250mV @ 2mA, 50mA 500nA 60 @ 100mA, 1V 300MHz 1kOhms TO-236-3, SC-59, SOT-23-3
RN2421(TE85L,F) TRANS PREBIAS PNP 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount PNP - Pre-Biased S-Mini 1kOhms 250mV @ 2mA, 50mA 500nA 60 @ 100mA, 1V 200MHz 1kOhms TO-236-3, SC-59, SOT-23-3
RN2423(TE85L,F) TRANS PREBIAS PNP 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount PNP - Pre-Biased S-Mini 4.7kOhms 250mV @ 1mA, 50mA 500nA 70 @ 100mA, 1V 200MHz 4.7kOhms TO-236-3, SC-59, SOT-23-3
RN1426TE85LF TRANS PREBIAS NPN 50V 0.8A SMINI Toshiba Semiconductor and Storage 800mA 50V 200mW Surface Mount NPN - Pre-Biased S-Mini 1kOhms 250mV @ 1mA, 50mA 500nA 90 @ 100mA, 1V 300MHz 10kOhms TO-236-3, SC-59, SOT-23-3
  • 10
  • 15
  • 50
  • 100