- Тип корпуса
- Производитель
- Ток коллектора (макс)
- Граничное напряжение КЭ(макс)
- Тип транзистора
-
- Напряжение насыщения (макс) @ Ib, Ic
- Обратный ток коллектора
- Усиление по току (hFE)
- Граничная частота
- Резистор эмиттер-база (R2)
- Package / Case
- Серия
| Наименование | Описание | Производитель
|
Ток коллектора (макс)
|
Граничное напряжение КЭ(макс)
|
Мощность - Макс.
|
Вид монтажа
|
Тип транзистора
|
Тип корпуса
|
Резистор базы (R1)
|
Напряжение насыщения (макс) @ Ib, Ic
|
Обратный ток коллектора
|
Усиление по току (hFE)
|
Граничная частота
|
Резистор эмиттер-база (R2)
|
Package / Case
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BCR183S | BIPOLAR DIGITAL TRANSISTOR | Infineon Technologies | 100mA | 50V | 250mW | Surface Mount | 2 PNP - Pre-Biased (Dual) | PG-SOT23-3-11 | 10kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 30 @ 5mA, 5V | 200MHz | 10kOhms | SC-59, SOT-23-3, TO-236-3 |
| BCR166E6327 | BIPOLAR DIGITAL TRANSISTOR | Infineon Technologies | 100mA | 50V | 200mW | Surface Mount | PNP - Pre-Biased | PG-SOT23-3-11 | 4.7kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 70 @ 5mA, 5V | 160MHz | 47kOhms | TO-236-3, SC-59, SOT-23-3 |
| BCR 129 E6327 | BIPOLAR DIGITAL TRANSISTOR | Infineon Technologies | 100mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | PG-SOT23-3-11 | 10kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 120 @ 5mA, 5V | 150MHz | TO-236-3, SC-59, SOT-23-3 | |
| BCR135TE6327 | BIPOLAR DIGITAL TRANSISTOR | Infineon Technologies | 100mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | PG-SOT23-3-11 | 10kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 70 @ 5mA, 5V | 150MHz | 47kOhms | TO-236-3, SC-59, SOT-23-3 |
| BCR129E6327 | BCR129 - DIGITAL TRANSISTOR | Infineon Technologies | 100mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | PG-SOT23-3-11 | 10kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 120 @ 5mA, 5V | 150MHz | TO-236-3, SC-59, SOT-23-3 | |
| BCR129SE6327 | BIPOLAR DIGITAL TRANSISTOR | Infineon Technologies | 100mA | 50V | 250mW | Surface Mount | 2 PNP - Pre-Biased (Dual) | PG-SOT23-3-11 | 10kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 120 @ 5mA, 5V | 150MHz | SC-59, SOT-23-3, TO-236-3 | |
| BCR135E6433 | BIPOLAR DIGITAL TRANSISTOR | Infineon Technologies | 100mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | PG-SOT23-3-11 | 10kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 70 @ 5mA, 5V | 150MHz | 47kOhms | TO-236-3, SC-59, SOT-23-3 |
| BCR196E6327 | BIPOLAR DIGITAL TRANSISTOR | Infineon Technologies | 70mA | 50V | 200mW | Surface Mount | PNP - Pre-Biased | PG-SOT23-3-11 | 47kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 50 @ 5mA, 5V | 150MHz | 22kOhms | TO-236-3, SC-59, SOT-23-3 |
| BCR133TE6327 | BIPOLAR DIGITAL TRANSISTOR | Infineon Technologies | 100mA | 50V | 200mW | Surface Mount | NPN - Pre-Biased | PG-SOT23-3-11 | 10kOhms | 300mV @ 500µA, 10mA | 100nA (ICBO) | 30 @ 5mA, 5V | 130MHz | 10kOhms | TO-236-3, SC-59, SOT-23-3 |
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