- Тип корпуса
- Производитель
- Ток коллектора (макс)
- Граничное напряжение КЭ(макс)
- Тип транзистора
-
- Напряжение насыщения (макс) @ Ib, Ic
- Обратный ток коллектора
- Усиление по току (hFE)
- Граничная частота
- Резистор эмиттер-база (R2)
- Package / Case
- Серия
| Наименование | Описание | Производитель
|
Ток коллектора (макс)
|
Граничное напряжение КЭ(макс)
|
Мощность - Макс.
|
Вид монтажа
|
Тип транзистора
|
Тип корпуса
|
Резистор базы (R1)
|
Напряжение насыщения (макс) @ Ib, Ic
|
Обратный ток коллектора
|
Усиление по току (hFE)
|
Граничная частота
|
Резистор эмиттер-база (R2)
|
Package / Case
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RN1701JE(TE85L,F) | TRANS 2NPN PREBIAS 0.1W ESV | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | ESV | 4.7kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 30 @ 10mA, 5V | 250MHz | 4.7kOhms | SOT-553 |
| RN2705JE(TE85L,F) | TRANS 2PNP PREBIAS 0.1W ESV | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 PNP - Pre-Biased (Dual) | ESV | 2.2kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 80 @ 10mA, 5V | 200MHz | 47kOhms | SOT-553 |
| RN1711JE(TE85L,F) | TRANSISTOR NPN X2 BRT Q1BSR10KOH | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 NPN - Pre-Biased (Dual) | ESV | 10kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 120 @ 1mA, 5V | 250MHz | SOT-553 | |
| RN1704JE(TE85L,F) | TRANS 2NPN PREBIAS 0.1W ESV | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | ESV | 47kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 80 @ 10mA, 5V | 250MHz | 47kOhms | SOT-553 |
| RN2709JE(TE85L,F) | TRANS 2PNP PREBIAS 0.1W ESV | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | ESV | 47kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 70 @ 10mA, 5V | 200MHz | 22kOhms | SOT-553 |
| RN1707JE(TE85L,F) | NPN X 2 BRT Q1BSR=10KOHM Q1BER=4 | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | ESV | 10kOhms | 300mV @ 250µA, 5mA | 500nA | 80 @ 10mA, 5V | 250MHz | 47kOhms | SOT-553 |
| RN2701JE(TE85L,F) | TRANS 2PNP PREBIAS 0.1W ESV | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | ESV | 4.7kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 30 @ 10mA, 5V | 200MHz | 4.7kOhms | SOT-553 |
| RN1710JE(TE85L,F) | NPN X 2 BRT Q1BSR=4.7KOHM Q1BER= | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | ESV | 4.7kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 120 @ 1mA, 5V | 250MHz | SOT-553 |
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