• Напряжение насыщения (макс) @ Ib, Ic
    • Обратный ток коллектора
    • Усиление по току (hFE)
    • Граничная частота
    • Резистор эмиттер-база (R2)
    • Package / Case
    • Серия
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Списком Таблицей
Найдено: 17
Наименование Описание Производитель
Ток коллектора (макс)
Граничное напряжение КЭ(макс)
Мощность - Макс.
Вид монтажа
Тип транзистора
Тип корпуса
Резистор базы (R1)
Напряжение насыщения (макс) @ Ib, Ic
Обратный ток коллектора
Усиление по току (hFE)
Граничная частота
Резистор эмиттер-база (R2)
Package / Case
FJN4310RBU SMALL SIGNAL BIPOLAR TRANSISTOR Fairchild Semiconductor 100mA 40V 300mW Through Hole PNP - Pre-Biased TO-92-3 10kOhms 300mV @ 1mA, 10mA 100nA (ICBO) 100 @ 1mA, 5V 200MHz TO-226-3, TO-92-3 (TO-226AA)
FJN4310RTA SMALL SIGNAL BIPOLAR TRANSISTOR Fairchild Semiconductor 100mA 40V 300mW Through Hole PNP - Pre-Biased TO-92-3 10kOhms 300mV @ 1mA, 10mA 100nA (ICBO) 100 @ 1mA, 5V 200MHz TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FJN4303RBU SMALL SIGNAL BIPOLAR TRANSISTOR Fairchild Semiconductor 100mA 50V 300mW Through Hole PNP - Pre-Biased TO-92-3 22kOhms 300mV @ 500µA, 10mA 100nA (ICBO) 56 @ 5mA, 5V 200MHz 22kOhms TO-226-3, TO-92-3 (TO-226AA)
FJN4302RTA 0.1A, 50V, PNP, TO-92 Fairchild Semiconductor 100mA 50V 300mW Through Hole PNP - Pre-Biased TO-92-3 10kOhms 300mV @ 500µA, 10mA 100nA (ICBO) 30 @ 5mA, 5V 200MHz 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FJN3303RTA 0.1A, 50V, NPN, TO-92 Fairchild Semiconductor 100mA 50V 300mW Through Hole NPN - Pre-Biased TO-92-3 22kOhms 300mV @ 500µA, 10mA 100nA (ICBO) 56 @ 5mA, 5V 250MHz 22kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FJN3305RTA 0.1A, 50V, NPN, TO-92 Fairchild Semiconductor 100mA 50V 300mW Through Hole NPN - Pre-Biased TO-92-3 4.7kOhms 300mV @ 500µA, 10mA 100nA (ICBO) 30 @ 5mA, 5V 250MHz 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FJN3310RTA SMALL SIGNAL BIPOLAR TRANSISTOR Fairchild Semiconductor 100mA 40V 300mW Through Hole NPN - Pre-Biased TO-92-3 10kOhms 300mV @ 1mA, 10mA 100nA (ICBO) 100 @ 1mA, 5V 250MHz TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FJN4305RTA 0.1A, 50V, PNP, TO-92 Fairchild Semiconductor 100mA 50V 300mW Through Hole PNP - Pre-Biased TO-92-3 4.7kOhms 300mV @ 500µA, 10mA 100nA (ICBO) 30 @ 5mA, 5V 200MHz 10kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FJN4314RBU SMALL SIGNAL BIPOLAR TRANSISTOR Fairchild Semiconductor 100mA 50V 300mW Through Hole PNP - Pre-Biased TO-92-3 4.7kOhms 300mV @ 500µA, 10mA 100nA (ICBO) 68 @ 5mA, 5V 200MHz 47kOhms TO-226-3, TO-92-3 (TO-226AA)
FJN3310RBU SMALL SIGNAL BIPOLAR TRANSISTOR Fairchild Semiconductor 100mA 40V 300mW Through Hole NPN - Pre-Biased TO-92-3 10kOhms 300mV @ 1mA, 10mA 100nA (ICBO) 100 @ 1mA, 5V 250MHz TO-226-3, TO-92-3 (TO-226AA)
FJN3306RTA SMALL SIGNAL BIPOLAR TRANSISTOR Fairchild Semiconductor 100mA 50V 300mW Through Hole NPN - Pre-Biased TO-92-3 10kOhms 300mV @ 500µA, 10mA 100nA (ICBO) 68 @ 5mA, 5V 250MHz 47kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FJN3304RBU SMALL SIGNAL BIPOLAR TRANSISTOR Fairchild Semiconductor 100mA 50V 300mW Through Hole NPN - Pre-Biased TO-92-3 47kOhms 300mV @ 500µA, 10mA 100nA (ICBO) 68 @ 5mA, 5V 250MHz 47kOhms TO-226-3, TO-92-3 (TO-226AA)
FJN3309RTA SMALL SIGNAL BIPOLAR TRANSISTOR Fairchild Semiconductor 100mA 40V 300mW Through Hole NPN - Pre-Biased TO-92-3 4.7kOhms 300mV @ 1mA, 10mA 100nA (ICBO) 100 @ 1mA, 5V 250MHz TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FJN4303RTA 0.1A, 50V, PNP, TO-92 Fairchild Semiconductor 100mA 50V 300mW Through Hole PNP - Pre-Biased TO-92-3 22kOhms 300mV @ 500µA, 10mA 100nA (ICBO) 56 @ 5mA, 5V 200MHz 22kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FJN4301RTA 0.1A, 50V, PNP, TO-92 Fairchild Semiconductor 100mA 50V 300mW Through Hole PNP - Pre-Biased TO-92-3 4.7kOhms 300mV @ 500µA, 10mA 100nA (ICBO) 20 @ 10mA, 5V 200MHz 4.7kOhms TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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