Микросхемы памяти объем 128Mb (8M x 16) | Интегральные микросхемы

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Наименование	Описание	Производитель	Вид монтажа	Формат памяти	Тактовая частота	Тип памяти	Объем памяти	Напряжение питания	Технология	Рабочая температура	Тип корпуса	Package / Case	Время доступа	Интерфейс	Время цикла записи - слово, страница	Серия
S29GL128S10GHIV20	IC FLASH 128MBIT PARALLEL 56FBGA	Cypress Semiconductor Corp	Surface Mount	FLASH		Non-Volatile	128Mb (8M x 16)	1.65V ~ 3.6V	FLASH - NOR	-40°C ~ 85°C (TA)	56-FBGA (9x7)	56-VFBGA	100ns	Parallel	60ns	GL-S
S29GL128S10DHV010	IC FLASH 128MBIT PARALLEL 64FBGA	Cypress Semiconductor Corp	Surface Mount	FLASH		Non-Volatile	128Mb (8M x 16)	2.7V ~ 3.6V	FLASH - NOR	-40°C ~ 105°C (TA)	64-FBGA (9x9)	64-LBGA	100ns	Parallel	60ns	GL-S
S29GL128S10WEI029	IC FLASH 128MBIT PARALLEL WAFER	Cypress Semiconductor Corp	Surface Mount	FLASH		Non-Volatile	128Mb (8M x 16)	2.7V ~ 3.6V	FLASH - NOR	-40°C ~ 85°C (TA)	Wafer	Die	100ns	Parallel	60ns	GL-S
S29GL128S90TFA023	IC FLASH 128MBIT PARALLEL 56TSOP	Cypress Semiconductor Corp	Surface Mount	FLASH		Non-Volatile	128Mb (8M x 16)	2.7V ~ 3.6V	FLASH - NOR	-40°C ~ 85°C (TA)	56-TSOP	56-TFSOP (0.724", 18.40mm Width)	90ns	Parallel	60ns	GL-S
IS42S16800F-6BL	IC DRAM 128MBIT PARALLEL 54TFBGA	ISSI, Integrated Silicon Solution Inc	Surface Mount	DRAM	166MHz	Volatile	128Mb (8M x 16)	3V ~ 3.6V	SDRAM	0°C ~ 70°C (TA)	54-TFBGA (8x8)	54-TFBGA	5.4ns	Parallel
IS43LR16800G-6BLI-TR	IC DRAM 128MBIT PARALLEL 60TFBGA	ISSI, Integrated Silicon Solution Inc	Surface Mount	DRAM	166MHz	Volatile	128Mb (8M x 16)	1.7V ~ 1.95V	SDRAM - Mobile LPDDR	-40°C ~ 85°C (TA)	60-TFBGA (8x10)	60-TFBGA	5.5ns	Parallel	15ns
IS42S16800F-7BI-TR	IC DRAM 128MBIT PARALLEL 54TFBGA	ISSI, Integrated Silicon Solution Inc	Surface Mount	DRAM	143MHz	Volatile	128Mb (8M x 16)	3V ~ 3.6V	SDRAM	-40°C ~ 85°C (TA)	54-TFBGA (8x8)	54-TFBGA	5.4ns	Parallel
IS42S16800F-6TL	IC DRAM 128MBIT PAR 54TSOP II	ISSI, Integrated Silicon Solution Inc	Surface Mount	DRAM	166MHz	Volatile	128Mb (8M x 16)	3V ~ 3.6V	SDRAM	0°C ~ 70°C (TA)	54-TSOP II	54-TSOP (0.400", 10.16mm Width)	5.4ns	Parallel
IS42S16800E-6TL-TR	IC DRAM 128MBIT PAR 54TSOP II	ISSI, Integrated Silicon Solution Inc	Surface Mount	DRAM	166MHz	Volatile	128Mb (8M x 16)	3V ~ 3.6V	SDRAM	0°C ~ 70°C (TA)	54-TSOP II	54-TSOP (0.400", 10.16mm Width)	5.4ns	Parallel
IS42S16800F-6BL-TR	IC DRAM 128MBIT PARALLEL 54TFBGA	ISSI, Integrated Silicon Solution Inc	Surface Mount	DRAM	166MHz	Volatile	128Mb (8M x 16)	3V ~ 3.6V	SDRAM	0°C ~ 70°C (TA)	54-TFBGA (8x8)	54-TFBGA	5.4ns	Parallel
MT48V8M16LFB4-8 IT:G	IC DRAM 128MBIT PARALLEL 54VFBGA	Micron Technology Inc.	Surface Mount	DRAM	125MHz	Volatile	128Mb (8M x 16)	2.3V ~ 2.7V	SDRAM - Mobile LPSDR	-40°C ~ 85°C (TA)	54-VFBGA (8x8)	54-VFBGA	7ns	Parallel	15ns
MT46H8M16LFCF-10 TR	IC DRAM 128MBIT PARALLEL 60VFBGA	Micron Technology Inc.	Surface Mount	DRAM	104MHz	Volatile	128Mb (8M x 16)	1.7V ~ 1.9V	SDRAM - Mobile LPDDR	0°C ~ 70°C (TA)	60-VFBGA (8x10)	60-VFBGA	7ns	Parallel	15ns
MT48LC8M16LFF4-10:G	IC DRAM 128MBIT PARALLEL 54VFBGA	Micron Technology Inc.	Surface Mount	DRAM	100MHz	Volatile	128Mb (8M x 16)	3V ~ 3.6V	SDRAM - Mobile LPSDR	0°C ~ 70°C (TA)	54-VFBGA (8x8)	54-VFBGA	7ns	Parallel	15ns
S29GL128S10DHB020	FLASH, 16MX8, 100NS, PBGA64	Spansion	Surface Mount	FLASH		Non-Volatile	128Mb (8M x 16)	2.7V ~ 3.6V	FLASH - NOR	-40°C ~ 105°C (TA)	64-FBGA (9x9)	64-LBGA	100ns	Parallel	60ns	Automotive, AEC-Q100, GL-S
W9412G6KH-5 TR	IC DRAM 128MBIT PAR 66TSOP II	Winbond Electronics	Surface Mount	DRAM	200MHz	Volatile	128Mb (8M x 16)	2.3V ~ 2.7V	SDRAM - DDR	0°C ~ 70°C (TA)	66-TSOP II	66-TSSOP (0.400", 10.16mm Width)	50ns	Parallel	15ns

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