Микросхемы памяти объем 128Mb (8M x 16) | Интегральные микросхемы

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Наименование	Описание	Производитель	Вид монтажа	Формат памяти	Тактовая частота	Тип памяти	Объем памяти	Напряжение питания	Технология	Рабочая температура	Тип корпуса	Package / Case	Время доступа	Интерфейс	Время цикла записи - слово, страница	Серия
S29GL128S90FAI010	IC FLASH 128MBIT PARALLEL 64FBGA	Cypress Semiconductor Corp	Surface Mount	FLASH		Non-Volatile	128Mb (8M x 16)	2.7V ~ 3.6V	FLASH - NOR	-40°C ~ 85°C (TA)	64-FBGA (13x11)	64-LBGA	90ns	Parallel	60ns	GL-S
S29GL128S10FFI013	IC FLASH 128MB FLASH NOR 64FBGA	Cypress Semiconductor Corp	Surface Mount	FLASH		Non-Volatile	128Mb (8M x 16)	2.7V ~ 3.6V	FLASH - NOR	-40°C ~ 85°C (TA)	64-FBGA (13x11)	64-LBGA	100ns	Parallel	60ns	Automotive, AEC-Q100, GL-S
S29GL128S90FHSS13	IC FLASH 128MBIT PARALLEL 64FBGA	Cypress Semiconductor Corp	Surface Mount	FLASH		Non-Volatile	128Mb (8M x 16)	2.7V ~ 3.6V	FLASH - NOR	0°C ~ 85°C (TA)	64-FBGA (13x11)	64-LBGA	90ns	Parallel	60ns	GL-S
S29GL128S90FHI013	IC FLASH 128MBIT PARALLEL 64FBGA	Cypress Semiconductor Corp	Surface Mount	FLASH		Non-Volatile	128Mb (8M x 16)	2.7V ~ 3.6V	FLASH - NOR	-40°C ~ 85°C (TA)	64-FBGA (13x11)	64-LBGA	90ns	Parallel	60ns	GL-S
IS45S16800F-7CTLA2-TR	IC DRAM 128MBIT PAR 54TSOP II	ISSI, Integrated Silicon Solution Inc	Surface Mount	DRAM	143MHz	Volatile	128Mb (8M x 16)	3V ~ 3.6V	SDRAM	-40°C ~ 105°C (TA)	54-TSOP II	54-TSOP (0.400", 10.16mm Width)	5.4ns	Parallel
IS45S16800F-6TLA1-TR	IC DRAM 128MBIT PAR 54TSOP II	ISSI, Integrated Silicon Solution Inc	Surface Mount	DRAM	166MHz	Volatile	128Mb (8M x 16)	3V ~ 3.6V	SDRAM	-40°C ~ 85°C (TA)	54-TSOP II	54-TSOP (0.400", 10.16mm Width)	5.4ns	Parallel
IS42RM16800H-75BLI	IC DRAM 128MBIT PARALLEL 54TFBGA	ISSI, Integrated Silicon Solution Inc	Surface Mount	DRAM	133MHz	Volatile	128Mb (8M x 16)	2.3V ~ 2.7V	SDRAM - Mobile	-40°C ~ 85°C (TA)	54-TFBGA (8x8)	54-TFBGA	6ns	Parallel
MT48H8M16LFB4-6 IT:K	IC DRAM 128MBIT PARALLEL 54VFBGA	Micron Technology Inc.	Surface Mount	DRAM	166MHz	Volatile	128Mb (8M x 16)	1.7V ~ 1.95V	SDRAM - Mobile LPSDR	-40°C ~ 85°C (TA)	54-VFBGA (8x8)	54-VFBGA	5ns	Parallel	15ns
MT48H8M16LFF4-10 IT	IC DRAM 128MBIT PARALLEL 54VFBGA	Micron Technology Inc.	Surface Mount	DRAM	104MHz	Volatile	128Mb (8M x 16)	1.7V ~ 1.9V	SDRAM - Mobile LPSDR	-40°C ~ 85°C (TA)	54-VFBGA (8x8)	54-VFBGA	7ns	Parallel	15ns
MT46H8M16LFCF-10 IT TR	IC DRAM 128MBIT PARALLEL 60VFBGA	Micron Technology Inc.	Surface Mount	DRAM	104MHz	Volatile	128Mb (8M x 16)	1.7V ~ 1.9V	SDRAM - Mobile LPDDR	-40°C ~ 85°C (TA)	60-VFBGA (8x10)	60-VFBGA	7ns	Parallel	15ns
MT46V8M16P-6T:D TR	IC DRAM 128MBIT PARALLEL 66TSOP	Micron Technology Inc.	Surface Mount	DRAM	167MHz	Volatile	128Mb (8M x 16)	2.3V ~ 2.7V	SDRAM - DDR	0°C ~ 70°C (TA)	66-TSOP	66-TSSOP (0.400", 10.16mm Width)	700ps	Parallel	15ns
MT48LC8M16LFF4-75 IT:G TR	IC DRAM 128MBIT PARALLEL 54VFBGA	Micron Technology Inc.	Surface Mount	DRAM	133MHz	Volatile	128Mb (8M x 16)	3V ~ 3.6V	SDRAM - Mobile LPSDR	-40°C ~ 85°C (TA)	54-VFBGA (8x8)	54-VFBGA	5.4ns	Parallel	15ns
PC28F128P30B85E	IC FLASH 128MBIT PAR 64EASYBGA	Micron Technology Inc.	Surface Mount	FLASH	52MHz	Non-Volatile	128Mb (8M x 16)	1.7V ~ 2V	FLASH - NOR	-40°C ~ 85°C (TA)	64-EasyBGA (10x13)	64-TBGA	85ns	Parallel	85ns	StrataFlash™
W9412G6JB-5	128MB DDR SDRAM X16, 200MHZ	Winbond Electronics	Surface Mount	DRAM	200MHz	Volatile	128Mb (8M x 16)	2.7V ~ 2.3V	SDRAM	0°C ~ 70°C (TA)	54-TFBGA (8x8)	54-TFBGA	700ps	LVTTL	15ns
W9412G6KH-4 TR	IC DRAM 128MBIT PAR 66TSOP II	Winbond Electronics	Surface Mount	DRAM	250MHz	Volatile	128Mb (8M x 16)	2.4V ~ 2.7V	SDRAM - DDR	0°C ~ 70°C (TA)	66-TSOP II	66-TSSOP (0.400", 10.16mm Width)	48ns	Parallel	12ns

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