Найдено: 6
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Добротность @ Vr, F
Тип диода
Вид монтажа
Тип корпуса
Рабочая температура
Емкость @ Vr, F
Коэфициент емкости
Параметры коэфициента емкости
MMBV809LT1 DIODE TUNING SS 20V SOT23 Rochester Electronics, LLC TO-236-3, SC-59, SOT-23-3 20V 75 @ 3V, 500MHz Single Surface Mount SOT-23-3 (TO-236) 125°C (TJ) 6.1pF @ 2V, 1MHz 2.6 C2/C8
MMBV105GLT1G VARIABLE CAPACITANCE DIODE Rochester Electronics, LLC TO-236-3, SC-59, SOT-23-3 30V 250 @ 3V, 50MHz Single Surface Mount SOT-23-3 (TO-236) 2.8pF @ 25V, 1MHz 6.5 C3/C25
MMBV2109LT1G VARIABLE CAPACITANCE DIODE Rochester Electronics, LLC TO-236-3, SC-59, SOT-23-3 30V 200 @ 4V, 50MHz Single Surface Mount SOT-23-3 (TO-236) 150°C (TJ) 36.3pF @ 4V, 1MHz 3.2 C2/C30
MMBV2105LT1G VARIABLE CAPACITANCE DIODE Rochester Electronics, LLC TO-236-3, SC-59, SOT-23-3 30V 400 @ 4V, 50MHz Single Surface Mount SOT-23-3 (TO-236) 150°C (TJ) 16.5pF @ 4V, 1MHz 3.2 C2/C30
MMBV2109LT1 DIODE TUNING SS 30V SOT23 Rochester Electronics, LLC TO-236-3, SC-59, SOT-23-3 30V 200 @ 4V, 50MHz Single Surface Mount SOT-23-3 (TO-236) 150°C (TJ) 36.3pF @ 4V, 1MHz 3.2 C2/C30
MMBV809LT1G VARIABLE CAPACITANCE DIODE Rochester Electronics, LLC TO-236-3, SC-59, SOT-23-3 20V 75 @ 3V, 500MHz Single Surface Mount SOT-23-3 (TO-236) 125°C (TJ) 6.1pF @ 2V, 1MHz 2.6 C2/C8