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- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Серия
Наименование | Описание | Производитель
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Package / Case
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Обратное пиковое напряжение
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Тип диода
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Тип корпуса
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Рабочая температура
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Ток, макс.
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Емкость @ Vr, F
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Сопротивление @ If, F
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BA779-2-HG3-08 | RF DIODE PIN 30V SOT23-3 | Vishay General Semiconductor - Diodes Division | TO-236-3, SC-59, SOT-23-3 | 30V | PIN - 1 Pair Series Connection | SOT-23-3 | 125°C (TJ) | 50mA | 0.5pF @ 0V, 100MHz | 50Ohm @ 1.5mA, 100MHz |
BA779-2-HG3-18 | RF DIODE PIN 30V SOT23-3 | Vishay General Semiconductor - Diodes Division | TO-236-3, SC-59, SOT-23-3 | 30V | PIN - 1 Pair Series Connection | SOT-23-3 | 125°C (TJ) | 50mA | 0.5pF @ 0V, 100MHz | 50Ohm @ 1.5mA, 100MHz |
BA779-HG3-08 | RF DIODE PIN 30V SOT23-3 | Vishay General Semiconductor - Diodes Division | TO-236-3, SC-59, SOT-23-3 | 30V | PIN - Single | SOT-23-3 | 125°C (TJ) | 50mA | 0.5pF @ 0V, 100MHz | 50Ohm @ 1.5mA, 100MHz |
S392D-HG3-08 | RF DIODE PIN 30V SOT23-3 | Vishay General Semiconductor - Diodes Division | TO-236-3, SC-59, SOT-23-3 | 30V | PIN - 1 Pair Series Connection | SOT-23-3 | 125°C (TJ) | 50mA | 0.5pF @ 0V, 100MHz | 60Ohm @ 1.5mA, 100MHz |
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