• Рассеиваемая мощность (Макс)
    • Сопротивление @ If, F
    • Серия
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Списком Таблицей
Найдено: 8
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Тип диода
Тип корпуса
Рабочая температура
Ток, макс.
Емкость @ Vr, F
Сопротивление @ If, F
BA283-TR RF DIODE STANDARD 35V DO35 Vishay General Semiconductor - Diodes Division DO-204AH, DO-35, Axial 35V Standard - Single DO-35 (DO-204AH) 125°C (TJ) 100mA 1.2pF @ 3V, 100MHz 900mOhm @ 10mA, 200MHz
BA282-TAP RF DIODE STANDARD 35V DO35 Vishay General Semiconductor - Diodes Division DO-204AH, DO-35, Axial 35V Standard - Single DO-35 (DO-204AH) 125°C (TJ) 100mA 1.25pF @ 3V, 100MHz 500mOhm @ 10mA, 200MHz
BA282-TR RF DIODE STANDARD 35V DO35 Vishay General Semiconductor - Diodes Division DO-204AH, DO-35, Axial 35V Standard - Single DO-35 (DO-204AH) 125°C (TJ) 100mA 1.25pF @ 3V, 100MHz 500mOhm @ 10mA, 200MHz
BA283-TAP RF DIODE STANDARD 35V DO35 Vishay General Semiconductor - Diodes Division DO-204AH, DO-35, Axial 35V Standard - Single DO-35 (DO-204AH) 125°C (TJ) 100mA 1.2pF @ 3V, 100MHz 900mOhm @ 10mA, 200MHz
BA479G-TAP RF DIODE PIN 30V DO35 Vishay General Semiconductor - Diodes Division DO-204AH, DO-35, Axial 30V PIN - Single DO-35 (DO-204AH) 125°C (TJ) 50mA 0.5pF @ 0V, 100MHz 50Ohm @ 1.5mA, 100MHz
BA479G-TR RF DIODE PIN 30V DO35 Vishay General Semiconductor - Diodes Division DO-204AH, DO-35, Axial 30V PIN - Single DO-35 (DO-204AH) 125°C (TJ) 50mA 0.5pF @ 0V, 100MHz 50Ohm @ 1.5mA, 100MHz
BA479S-TAP RF DIODE PIN 30V DO35 Vishay General Semiconductor - Diodes Division DO-204AH, DO-35, Axial 30V PIN - Single DO-35 (DO-204AH) 125°C (TJ) 50mA 0.5pF @ 0V, 100MHz 50Ohm @ 1.5mA, 100MHz
BA479S-TR RF DIODE PIN 30V DO35 Vishay General Semiconductor - Diodes Division DO-204AH, DO-35, Axial 30V PIN - Single DO-35 (DO-204AH) 125°C (TJ) 50mA 0.5pF @ 0V, 100MHz 50Ohm @ 1.5mA, 100MHz
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