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- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Серия
Наименование | Описание | Производитель
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Package / Case
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Обратное пиковое напряжение
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Тип диода
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Тип корпуса
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Рабочая температура
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Ток, макс.
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Емкость @ Vr, F
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Рассеиваемая мощность (Макс)
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Сопротивление @ If, F
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BAR 50-02L E6327 | RF DIODE PIN 50V 250MW TSLP-2 | Infineon Technologies | SOD-882 | 50V | PIN - Single | PG-TSLP-2-1 | 150°C (TJ) | 100mA | 0.4pF @ 5V, 1MHz | 250mW | 4.5Ohm @ 10mA, 100MHz |
BAR63-02LE6327 | PIN DIODE, 50V V(BR) | Infineon Technologies | SOD-882 | 50V | PIN - Single | PG-TSLP-2-1 | 150°C (TJ) | 100mA | 0.3pF @ 5V, 1MHz | 250mW | |
BAR 65-02L E6327 | RF DIODE PIN 30V 250MW TSLP-2 | Infineon Technologies | SOD-882 | 30V | PIN - Single | PG-TSLP-2-1 | 150°C (TJ) | 100mA | 0.8pF @ 3V, 1MHz | 250mW | 900mOhm @ 10mA, 100MHz |
BAT6202LE6327XTMA1 | DIODE SCHOTTKY 40V 100MW TSLP-2 | Infineon Technologies | SOD-882 | 40V | Schottky - Single | PG-TSLP-2-1 | 150°C (TJ) | 20mA | 0.6pF @ 0V, 1MHz | 100mW | |
BAR6302LE6433XT | RF DIODE PIN 50V 250MW TSLP-2 | Infineon Technologies | SOD-882 | 50V | PIN - Single | PG-TSLP-2-1 | 150°C (TJ) | 100mA | 0.3pF @ 5V, 1MHz | 250mW | 1Ohm @ 10mA, 100MHz |
BAR6302LE6327XTMA1 | RF DIODE PIN 50V 250MW TSLP-2 | Infineon Technologies | SOD-882 | 50V | PIN - Single | PG-TSLP-2-1 | 150°C (TJ) | 100mA | 0.3pF @ 5V, 1MHz | 250mW | 1Ohm @ 10mA, 100MHz |
BA89202LE6327 | RECTIFIER DIODE, 35V | Infineon Technologies | SOD-882 | 35V | Standard - Single | PG-TSLP-2-1 | 150°C (TJ) | 100mA | 1.1pF @ 3V, 1MHz | 500mOhm @ 10mA, 100MHz | |
BA 892-02L E6327 | RF DIODE STANDARD 35V TSLP-2-1 | Infineon Technologies | SOD-882 | 35V | Standard - Single | PG-TSLP-2-1 | 150°C (TJ) | 100mA | 1.1pF @ 3V, 1MHz | 500mOhm @ 10mA, 100MHz |
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- 100