|
RFN10BM3STL
|
DIODE GEN PURP 350V 10A TO252 |
Rohm Semiconductor |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
10A |
Standard |
Surface Mount |
TO-252 |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 350V |
|
1.5V @ 10A |
350V |
30ns |
150°C (Max) |
|
|
RFN10BM3SFHTL
|
SUPER FAST RECOVERY DIODE (CORRE |
Rohm Semiconductor |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
10A |
Standard |
Surface Mount |
TO-252 |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 350V |
|
1.5V @ 10A |
350V |
30ns |
150°C (Max) |
Automotive, AEC-Q101 |
|
RFUH10NS4SFHTL
|
FAST RECOVERY DIODES (CORRESPOND |
Rohm Semiconductor |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A |
Standard |
Surface Mount |
LPDS |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 430V |
150pF @ 0V, 1MHz |
1.7V @ 10A |
430V |
25ns |
150°C (Max) |
Automotive, AEC-Q101 |
|
RFU10TF6S
|
DIODE GEN PURP 600V 10A TO220NFM |
Rohm Semiconductor |
TO-220-2 Full Pack |
10A |
Standard |
Through Hole |
TO-220NFM |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 600V |
|
2.8V @ 10A |
600V |
25ns |
150°C (Max) |
|
|
RFUS10TF4S
|
DIODE GEN PURP 430V 10A TO220NFM |
Rohm Semiconductor |
TO-220-2 Full Pack |
10A |
Standard |
Through Hole |
TO-220NFM |
Fast Recovery =< 500ns, > 200mA (Io) |
|
|
|
430V |
|
150°C (Max) |
|
|
RFN10TF6S
|
DIODE GEN PURP 600V 10A TO220NFM |
Rohm Semiconductor |
TO-220-2 |
10A |
Standard |
Through Hole |
TO-220NFM |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 600V |
|
1.55V @ 10A |
600V |
50ns |
150°C (Max) |
|
|
RFN10BGE3STL
|
RFN10BGE3S IS THE SILICON EPITAX |
Rohm Semiconductor |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
10A |
Standard |
Surface Mount |
TO-252GE |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 350V |
|
1.5V @ 10A |
350V |
30ns |
150°C |
|
|
SCS110AGC
|
DIODE SCHOTTKY 600V 10A TO220AC |
Rohm Semiconductor |
TO-220-2 |
10A |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
200µA @ 600V |
430pF @ 1V, 1MHz |
1.7V @ 10A |
600V |
0ns |
175°C (Max) |
|
|
RFN10NS4STL
|
FAST RECOVERY DIODE : ROHM'S FAS |
Rohm Semiconductor |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A |
Standard |
Surface Mount |
LPDS |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 430V |
|
1.55V @ 10A |
430V |
30ns |
150°C |
|
|
RF1005TF6SFHC9
|
ROHM'S FAST RECOVERY DIODES ARE |
Rohm Semiconductor |
TO-220-2 Full Pack |
10A |
Standard |
Through Hole |
TO-220NFM |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 600V |
|
1.7V @ 10A |
600V |
40ns |
150°C (Max) |
Automotive, AEC-Q101 |
|
RFUH10NS6SFHTL
|
FAST RECOVERY DIODES (CORRESPOND |
Rohm Semiconductor |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A |
Standard |
Surface Mount |
LPDS |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 600V |
157pF @ 0V, 1MHz |
2.8V @ 10A |
600V |
25ns |
150°C (Max) |
Automotive, AEC-Q101 |
|
RFN10NS3STL
|
FAST RECOVERY DIODE : ROHM'S FAS |
Rohm Semiconductor |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A |
Standard |
Surface Mount |
LPDS |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 350V |
|
1.5V @ 10A |
350V |
30ns |
150°C |
|
|
RFNL10TJ6SGC9
|
DIODE GP 600V 10A TO220ACFP |
Rohm Semiconductor |
TO-220-2 |
10A |
Standard |
Through Hole |
TO-220ACFP |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 600V |
|
1.3V @ 10A |
600V |
150ns |
150°C (Max) |
|
|
RFN10NS6STL
|
DIODE GEN PURP 600V 10A LPDS |
Rohm Semiconductor |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A |
Standard |
Surface Mount |
LPDS |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 600V |
|
1.55V @ 10A |
600V |
50ns |
150°C (Max) |
|
|
RFNL10BM6SFHTL
|
RFNL10BM6SFH IS THE SILICON EPIT |
Rohm Semiconductor |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
10A |
Standard |
Surface Mount |
TO-252 |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 600V |
|
1.3V @ 10A |
600V |
180ns |
150°C |
|