• Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 36
  • RFN10BM3STL
    DIODE GEN PURP 350V 10A TO252
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 350V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 10µA @ 350V
    • Operating Temperature - Junction: 150°C (Max)
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  • RFN10BM3SFHTL
    SUPER FAST RECOVERY DIODE (CORRE
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 350V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 10µA @ 350V
    • Operating Temperature - Junction: 150°C (Max)
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  • RFUH10NS4SFHTL
    FAST RECOVERY DIODES (CORRESPOND
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: LPDS
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 430V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 25ns
    • Current - Reverse Leakage @ Vr: 10µA @ 430V
    • Capacitance @ Vr, F: 150pF @ 0V, 1MHz
    • Operating Temperature - Junction: 150°C (Max)
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  • RFU10TF6S
    DIODE GEN PURP 600V 10A TO220NFM
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220NFM
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 2.8V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 25ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Operating Temperature - Junction: 150°C (Max)
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  • RFUS10TF4S
    DIODE GEN PURP 430V 10A TO220NFM
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220NFM
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 430V
    • Current - Average Rectified (Io): 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Operating Temperature - Junction: 150°C (Max)
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  • RFN10TF6S
    DIODE GEN PURP 600V 10A TO220NFM
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220NFM
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Operating Temperature - Junction: 150°C (Max)
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  • RFN10BGE3STL
    RFN10BGE3S IS THE SILICON EPITAX
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252GE
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 350V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 10µA @ 350V
    • Operating Temperature - Junction: 150°C
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  • SCS110AGC
    DIODE SCHOTTKY 600V 10A TO220AC
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 600V
    • Capacitance @ Vr, F: 430pF @ 1V, 1MHz
    • Operating Temperature - Junction: 175°C (Max)
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  • RFN10NS4STL
    FAST RECOVERY DIODE : ROHM'S FAS
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: LPDS
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 430V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 10µA @ 430V
    • Operating Temperature - Junction: 150°C
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  • RF1005TF6SFHC9
    ROHM'S FAST RECOVERY DIODES ARE
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Series: Automotive, AEC-Q101
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220NFM
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 40ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Operating Temperature - Junction: 150°C (Max)
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  • RFUH10NS6SFHTL
    FAST RECOVERY DIODES (CORRESPOND
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: LPDS
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 2.8V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 25ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Capacitance @ Vr, F: 157pF @ 0V, 1MHz
    • Operating Temperature - Junction: 150°C (Max)
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  • RFN10NS3STL
    FAST RECOVERY DIODE : ROHM'S FAS
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: LPDS
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 350V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 30ns
    • Current - Reverse Leakage @ Vr: 10µA @ 350V
    • Operating Temperature - Junction: 150°C
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  • RFNL10TJ6SGC9
    DIODE GP 600V 10A TO220ACFP
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220ACFP
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 150ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Operating Temperature - Junction: 150°C (Max)
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  • RFN10NS6STL
    DIODE GEN PURP 600V 10A LPDS
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: LPDS
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Operating Temperature - Junction: 150°C (Max)
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  • RFNL10BM6SFHTL
    RFNL10BM6SFH IS THE SILICON EPIT
    Rohm Semiconductor
    • Manufacturer: Rohm Semiconductor
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 180ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Operating Temperature - Junction: 150°C
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