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- Емкость @ Vr, F
- Прямое напряжение
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Средний выпрямленный ток (Io) на диод
- Серия
Наименование | Описание | Производитель
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Package / Case
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Средний выпрямленный ток (Io)
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Тип диода
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Вид монтажа
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Тип корпуса
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Скорость
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Ток утечки
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Емкость @ Vr, F
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Прямое напряжение
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Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Серия
|
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JANTXV1N5620/TR | STD RECTIFIER | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 800V | 1.3V @ 3A | 800V | 2µs | -65°C ~ 200°C | Military, MIL-PRF-19500/427 | ||
LSM150GE3/TR13 | DIODE SCHOTTKY 50V 1A DO215AA | Microchip Technology | DO-215AA, SMB Gull Wing | 1A | Schottky | Surface Mount | DO-215AA | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 50V | 580mV @ 1A | 50V | -55°C ~ 150°C | |||
JANS1N5623US | RECTIFIER DIODE | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1.6V @ 3A | 500ns | -65°C ~ 175°C | Military, MIL-PRF-19500/429 | |||
JAN1N5616 | DIODE GEN PURP 400V 1A AXIAL | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 400V | 1.3V @ 3A | 400V | 2µs | -65°C ~ 200°C | Military, MIL-PRF-19500/427 | ||
JANTXV1N5804US/TR | RECTIFIER UFR,FRR | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 100V | 25pF @ 10V, 1MHz | 875mV @ 1A | 100V | 25ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 |
JANTXV1N4248 | DIODE GEN PURP 800V 1A AXIAL | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 800V | 1.3V @ 3A | 800V | 5µs | -65°C ~ 175°C | Military, MIL-PRF-19500/286 | ||
JAN1N5614/TR | STD RECTIFIER | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 200V | 1.3V @ 3A | 200V | 2µs | -65°C ~ 200°C | Military, MIL-PRF-19500/427 | ||
JAN1N4944/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 400V | 1.3V @ 1A | 400V | 150ns | -65°C ~ 175°C | Military, MIL-PRF-19500/360 | ||
1N5806USE3/TR | UFR,FRR | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 150V | 25pF @ 10V, 1MHz | 975mV @ 2.5A | 150V | 25ns | -65°C ~ 175°C | |
UFS150JE3/TR13 | DIODE GEN PURP 500V 1A DO214BA | Microchip Technology | DO-214BA | 1A | Standard | Surface Mount | DO-214BA | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 500V | 1.1V @ 1A | 500V | 50ns | -55°C ~ 175°C | ||
JANS1N5802US/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 25pF @ 10V, 1MHz | 975mV @ 2.5A | 50V | 25ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 | |
1N5614US | DIODE GEN PURP 200V 1A D5A | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | D-5A | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 200V | 1.3V @ 3A | 200V | 2µs | -65°C ~ 200°C | ||
1N5805/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 125V | 25pF @ 10V, 1MHz | 875mV @ 1A | 125V | 25ns | -65°C ~ 125°C | ||
UPS5819E3/TR13 | DIODE SCHOTTKY 40V 1A POWERMITE1 | Microchip Technology | DO-216AA | 1A | Schottky | Surface Mount | Powermite 1 (DO216-AA) | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 60pF @ 5V, 1MHz | 550mV @ 1A | 40V | -55°C ~ 150°C | ||
JANTX1N4946/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 600V | 1.3V @ 1A | 600V | 250ns | -65°C ~ 175°C | Military, MIL-PRF-19500/359 |
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