• Емкость @ Vr, F
    • Прямое напряжение
    • Обратное постоянное напряжение (Vr) (Max)
    • Время обратного восстановления (trr)
    • Рабочая температура перехода
    • Конфигурация диода
    • Средний выпрямленный ток (Io) на диод
    • Серия
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Списком Таблицей
Найдено: 598
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Серия
LSM140 MELF DIODE SCHOTTKY 40V 1A DO213AB Microchip Technology DO-213AB, MELF 1A Schottky Surface Mount DO-213AB Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 40V 580mV @ 1A 40V -65°C ~ 150°C
JANTXV1N5819-1 DIODE SCHOTTKY 45V 1A DO41 Microchip Technology DO-204AL, DO-41, Axial 1A Schottky Through Hole DO-41 Fast Recovery =< 500ns, > 200mA (Io) 50µA @ 45V 70pF @ 5V, 1MHz 490mV @ 1A 45V -65°C ~ 125°C Military, MIL-PRF-19500/586
1N5619 DIODE GEN PURP 600V 1A AXIAL Microchip Technology A, Axial 1A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 500nA @ 600V 25pF @ 12V, 1MHz 1.6V @ 3A 600V 250ns -65°C ~ 175°C
JANTX1N5804 DIODE GEN PURP 100V 1A AXIAL Microchip Technology A, Axial 1A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 1µA @ 100V 25pF @ 10V, 1MHz 875mV @ 1A 100V 25ns -65°C ~ 175°C Military, MIL-PRF-19500/477
JAN1N3957 DIODE GEN PURP 1KV 1A AXIAL Microchip Technology A, Axial 1A Standard Through Hole Standard Recovery >500ns, > 200mA (Io) 100µA @ 300V 1.1V @ 1A 1000V -65°C ~ 175°C Military, MIL-PRF-19500/228
JANTX1N5615US/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, A 1A Standard Surface Mount A, SQ-MELF Fast Recovery =< 500ns, > 200mA (Io) 1.6V @ 3A 200V 150ns -65°C ~ 175°C
HSM180JE3/TR13 DIODE SCHOTTKY 80V 1A DO214BA Microchip Technology DO-214BA 1A Schottky Surface Mount DO-214BA Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 80V 840mV @ 1A 80V -55°C ~ 175°C
LSM150JE3/TR13 DIODE SCHOTTKY 50V 1A DO214BA Microchip Technology DO-214BA 1A Schottky Surface Mount DO-214BA Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 50V 580mV @ 1A 50V -55°C ~ 150°C
1N4247/TR RECTIFIER UFR,FRR Microchip Technology A, Axial 1A Standard Through Hole Standard Recovery >500ns, > 200mA (Io) 1µA @ 600V 1.3V @ 3A 600V 5µs -65°C ~ 175°C
JANTXV1N6624US DIODE GEN PURP 900V 1A D5A Microchip Technology SQ-MELF, A 1A Standard Surface Mount D-5A Fast Recovery =< 500ns, > 200mA (Io) 500nA @ 150V 10pF @ 10V, 1MHz 1.55V @ 1A 900V 60ns -65°C ~ 150°C Military, MIL-PRF-19500/585
JANTX1N5617 DIODE GEN PURP 400V 1A AXIAL Microchip Technology A, Axial 1A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 500nA @ 400V 35pF @ 12V, 1MHz 1.6V @ 3A 400V 150ns -65°C ~ 175°C Military, MIL-PRF-19500/429
JANTX1N3957/TR HIGH VOLTAGE RECTIFIER Microchip Technology A, Axial 1A Standard Through Hole Standard Recovery >500ns, > 200mA (Io) 1µA @ 1V 1.1V @ 1A 1000V -65°C ~ 175°C Military, MIL-PRF-19500/228
JANTX1N6761UR-1/TR DIODE SMALL-SIGNAL SCHOTTKY Microchip Technology DO-213AB, MELF (Glass) 1A Schottky Surface Mount DO-213AB (MELF, LL41) Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 100V 380mV @ 100mA 100V -65°C ~ 125°C Military, MIL-PRF-19500/586
LSM115JE3/TR13 DIODE SCHOTTKY 15V 1A DO214BA Microchip Technology DO-214BA 1A Schottky Surface Mount DO-214BA Fast Recovery =< 500ns, > 200mA (Io) 10mA @ 15V 220mV @ 1A 15V -55°C ~ 150°C
JANTXV1N5617/TR RECTIFIER UFR,FRR Microchip Technology A, Axial 1A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 500nA @ 400V 35pF @ 12V, 1MHz 1.6V @ 3A 400V 150ns -65°C ~ 175°C Military, MIL-PRF-19500/427
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