Diodes - Rectifiers - Arrays Microchip Technology 1A | Diodes

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Found: 598

LSM140 MELF

DIODE SCHOTTKY 40V 1A DO213AB

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: DO-213AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 40V
- Operating Temperature - Junction: -65°C ~ 150°C
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JANTXV1N5819-1

DIODE SCHOTTKY 45V 1A DO41

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/586
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 490mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 50µA @ 45V
- Capacitance @ Vr, F: 70pF @ 5V, 1MHz
- Operating Temperature - Junction: -65°C ~ 125°C
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1N5619

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250ns
- Current - Reverse Leakage @ Vr: 500nA @ 600V
- Capacitance @ Vr, F: 25pF @ 12V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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JANTX1N5804

DIODE GEN PURP 100V 1A AXIAL

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/477
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 1µA @ 100V
- Capacitance @ Vr, F: 25pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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JAN1N3957

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/228
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 100µA @ 300V
- Operating Temperature - Junction: -65°C ~ 175°C
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JANTX1N5615US/TR

RECTIFIER UFR,FRR

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A, SQ-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Operating Temperature - Junction: -65°C ~ 175°C
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HSM180JE3/TR13

DIODE SCHOTTKY 80V 1A DO214BA

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: DO-214BA
- Supplier Device Package: DO-214BA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 100µA @ 80V
- Operating Temperature - Junction: -55°C ~ 175°C
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LSM150JE3/TR13

DIODE SCHOTTKY 50V 1A DO214BA

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: DO-214BA
- Supplier Device Package: DO-214BA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
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1N4247/TR

RECTIFIER UFR,FRR

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Operating Temperature - Junction: -65°C ~ 175°C
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JANTXV1N6624US

DIODE GEN PURP 900V 1A D5A

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/585
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 900V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 500nA @ 150V
- Capacitance @ Vr, F: 10pF @ 10V, 1MHz
- Operating Temperature - Junction: -65°C ~ 150°C
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JANTX1N5617

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/429
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 500nA @ 400V
- Capacitance @ Vr, F: 35pF @ 12V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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JANTX1N3957/TR

HIGH VOLTAGE RECTIFIER

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/228
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1µA @ 1V
- Operating Temperature - Junction: -65°C ~ 175°C
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JANTX1N6761UR-1/TR

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/586
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB (MELF, LL41)
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 380mV @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Operating Temperature - Junction: -65°C ~ 125°C
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LSM115JE3/TR13

DIODE SCHOTTKY 15V 1A DO214BA

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: DO-214BA
- Supplier Device Package: DO-214BA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 15V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 220mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 10mA @ 15V
- Operating Temperature - Junction: -55°C ~ 150°C
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JANTXV1N5617/TR

RECTIFIER UFR,FRR

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500/427
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 500nA @ 400V
- Capacitance @ Vr, F: 35pF @ 12V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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