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- Емкость @ Vr, F
- Прямое напряжение
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
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Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N5622US/TR | STD RECTIFIER | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | D-5A | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 1V | 1.3V @ 3A | 1000V | 2µs | -65°C ~ 200°C | ||
| JANS1N5614 | RECTIFIER DIODE | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 200V | 1.3V @ 3A | 200V | 2µs | -65°C ~ 200°C | Military, MIL-PRF-19500/427 | |
| JAN1N4248/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 800V | 1.3V @ 3A | 800V | 5µs | -65°C ~ 175°C | Military, MIL-PRF-19500/286 | ||
| JANTX1N5804/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 100V | 25pF @ 10V, 1MHz | 875mV @ 1A | 100V | 25ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 | |
| JANKCE1N5806 | RECTIFIER UFR,FRR | Microchip Technology | Die | 1A | Standard | Surface Mount | Die | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 150V | 25pF @ 10V, 1MHz | 875mV @ 1A | 150V | 25ns | -65°C ~ 175°C | |
| JANTXV1N5802/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 50V | 25pF @ 10V, 1MHz | 875mV @ 1A | 50V | 25ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 | |
| UES1105E3/TR | RECTIFIER UFR,FRR | Microchip Technology | Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 300V | 1.25V @ 1A | 300V | 50ns | -55°C ~ 150°C | ||
| JANS1N5614/TR | STD RECTIFIER | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 200V | 1.3V @ 3A | 200V | 2µs | -65°C ~ 200°C | Military, MIL-PRF-19500/427 | |
| JAN1N6761UR-1/TR | DIODE SMALL-SIGNAL SCHOTTKY | Microchip Technology | DO-213AB, MELF (Glass) | 1A | Schottky | Surface Mount | DO-213AB (MELF, LL41) | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 100V | 70pF @ 5V, 1MHz | 380mV @ 100mA | 100V | -65°C ~ 150°C | Military, MIL-PRF-19500/586 | |
| 1N5819-1/TR | DIODE SMALL-SIGNAL SCHOTTKY | Microchip Technology | DO-204AL, DO-41, Axial | 1A | Schottky | Through Hole | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 45V | 70pF @ 5V, 1MHz | 340mV @ 1A | 45V | -65°C ~ 125°C | ||
| UES1001 | RECTIFIER | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 975mV @ 1A | 50V | 25ns | -55°C ~ 175°C | |||
| 1N6761/TR | DIODE SMALL-SIGNAL SCHOTTKY | Microchip Technology | DO-204AL, DO-41, Axial | 1A | Schottky | Through Hole | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 100V | 70pF @ 5V, 1MHz | 690mV @ 1A | 100V | -65°C ~ 150°C | ||
| JAN1N4247/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 600V | 1.3V @ 3A | 600V | 5µs | -65°C ~ 175°C | Military, MIL-PRF-19500/286 | ||
| JANTX1N4248 | DIODE GEN PURP 800V 1A E3 | Microchip Technology | E3 | 1A | Standard | E3 | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 800V | 1.3V @ 3A | 800V | 5µs | -65°C ~ 175°C | Military, MIL-PRF-19500/286 | ||
| 1N5620 | DIODE GEN PURP 800V 1A AXIAL | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 800V | 1.3V @ 3A | 800V | 2µs | -65°C ~ 200°C |
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