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- Емкость @ Vr, F
- Прямое напряжение
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N6625E3/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 1V | 1.95V @ 1.5A | 1.1 V | 80ns | -65°C ~ 150°C | ||
| 1N3611E3/TR | STD RECTIFIER | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 200V | 1.1V @ 1A | 200V | -65°C ~ 175°C | |||
| 1N3957/TR | STD RECTIFIER | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 1V | 1.1V @ 1A | 1000V | -65°C ~ 175°C | ||||
| JANS1N5615US/TR | RECTIFIER UFR,FRR | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 1.6V @ 3A | 200V | 150ns | -65°C ~ 175°C | |||
| JANTXV1N5620US/TR | STD RECTIFIER | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A, SQ-MELF | Standard Recovery >500ns, > 200mA (Io) | 1.3V @ 3A | 800V | 2µs | -65°C ~ 200°C | Military, MIL-PRF-19500/427 | ||
| JAN1N5616US/TR | STD RECTIFIER | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | D-5A | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 400V | 1.3V @ 3A | 400V | 2µs | -65°C ~ 200°C | Military, MIL-PRF-19500/427 | |
| CD5817 | DIODE SMALL-SIGNAL SCHOTTKY | Microchip Technology | Die | 1A | Schottky | Surface Mount | Die | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 20V | 600mV @ 1A | 20V | -55°C ~ 125°C | Military, MIL-PRF-19500/586 | ||
| JANTXV1N4247 | DIODE GEN PURP 600V 1A AXIAL | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 600V | 1.3V @ 3A | 600V | 5µs | -65°C ~ 175°C | Military, MIL-PRF-19500/286 | ||
| JANTXV1N6623US | DIODE GEN PURP 880V 1A D5A | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 880V | 1.55V @ 1A | 880V | 50ns | -65°C ~ 150°C | Military, MIL-PRF-19500/585 | |
| UPS5817E3/TR7 | DIODE SCHOTTKY 20V 1A POWERMITE1 | Microchip Technology | DO-216AA | 1A | Schottky | Surface Mount | Powermite 1 (DO216-AA) | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 450mV @ 1A | 20V | -55°C ~ 150°C | |||
| JANS1N5614US/TR | STD RECTIFIER | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | A, SQ-MELF | Standard Recovery >500ns, > 200mA (Io) | 1.3V @ 3A | 200V | 2µs | -65°C ~ 200°C | Military, MIL-PRF-19500/427 | ||
| 1N3614 | DIODE GEN PURP 800V 1A AXIAL | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 800V | 1.1V @ 1A | 800V | -65°C ~ 175°C | ||||
| 1N4245/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 200V | 1.3V @ 3A | 200V | 5µs | -65°C ~ 175°C | |||
| 1N6623 | DIODE GEN PURP 880V 1A AXIAL | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 880V | 10pF @ 10V, 1MHz | 1.55V @ 1A | 880V | 50ns | -65°C ~ 150°C | ||
| JANTXV1N4248/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 800V | 1.3V @ 3A | 800V | 5µs | -65°C ~ 175°C | Military, MIL-PRF-19500/286 |
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