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- Емкость @ Vr, F
- Прямое напряжение
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Средний выпрямленный ток (Io) на диод
- Серия
Наименование | Описание | Производитель
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Package / Case
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Средний выпрямленный ток (Io)
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Тип диода
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Вид монтажа
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Тип корпуса
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Скорость
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Ток утечки
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Емкость @ Vr, F
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Прямое напряжение
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Обратное постоянное напряжение (Vr) (Max)
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Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Серия
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UPS115U/TR7 | DIODE SCHOTTKY 15V 1A POWERMITE | Microchip Technology | DO-216AA | 1A | Schottky | Surface Mount | Powermite | Fast Recovery =< 500ns, > 200mA (Io) | 10mA @ 15V | 220mV @ 1A | 15V | -55°C ~ 150°C | |||
JANTXV1N5819UR-1 | SCHOTTKY | Microchip Technology | DO-213AB, MELF (Glass) | 1A | Schottky | Surface Mount | DO-213AB (MELF, LL41) | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 45V | 70pF @ 5V, 1MHz | 490mV @ 1A | 45V | -65°C ~ 125°C | Military, MIL-PRF-19500/586 | |
JANTX1N6625US/TR | RECTIFIER UFR,FRR | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 500 nA @ 1.1 V | 10pF @ 10V, 1MHz | 1.75V @ 1A | 1.1 V | 60ns | -65°C ~ 150°C | Military, MIL-PRF-19500/585 |
JANTXV1N5615US | DIODE GEN PURP 200V 1A D-5A | Microchip Technology | SQ-MELF, A | 1A | Standard | Surface Mount | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 600V | 45pF @ 12V, 1MHz | 1.6V @ 3A | 200V | 150ns | -65°C ~ 175°C | Military, MIL-PRF-19500/429 |
LSM140GE3/TR13 | DIODE SCHOTTKY 40V 1A DO215AA | Microchip Technology | DO-215AA, SMB Gull Wing | 1A | Schottky | Surface Mount | DO-215AA | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 40V | 580mV @ 1A | 40V | -55°C ~ 150°C | |||
1N5819-1E3 | DIODE SMALL-SIGNAL SCHOTTKY | Microchip Technology | DO-204AL, DO-41, Axial | 1A | Schottky | Through Hole | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 45V | 70pF @ 5V, 1MHz | 490mV @ 1A | 45V | -65°C ~ 125°C | ||
UPS5817/TR7 | DIODE SCHOTTKY 20V 1A POWERMITE | Microchip Technology | DO-216AA | 1A | Schottky | Surface Mount | Powermite | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 450mV @ 1A | 20V | -55°C ~ 150°C | |||
JANTX1N6625 | DIODE GEN PURP 1.1KV 1A AXIAL | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 1100V | 10pF @ 10V, 1MHz | 1.75V @ 1A | 1100V | 60ns | -65°C ~ 150°C | Military, MIL-PRF-19500/585 | |
JANS1N5617/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1.6V @ 3A | 400V | 150ns | -65°C ~ 200°C | Military, MIL-PRF-19500/429 | ||
JAN1N5819-1 | DIODE SCHOTTKY 45V 1A DO41 | Microchip Technology | DO-204AL, DO-41, Axial | 1A | Schottky | Through Hole | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 45V | 490mV @ 1A | 45V | -65°C ~ 150°C | Military, MIL-PRF-19500/586 | ||
JANS1N5623 | RECTIFIER DIODE | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1.6V @ 3A | 500ns | -65°C ~ 200°C | Military, MIL-PRF-19500/429 | |||
1N4944 | DIODE GEN PURP 400V 1A AXIAL | Microchip Technology | A, Axial | 1A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 400V | 35pF @ 12V, 1MHz | 1.3V @ 1A | 400V | 150ns | -65°C ~ 175°C | ||
CD1A40 | DIODE SMALL-SIGNAL SCHOTTKY | Microchip Technology | Die | 1A | Schottky | Surface Mount | Die | Fast Recovery =< 500ns, > 200mA (Io) | 100µA @ 40V | 600mV @ 1A | 40V | -55°C ~ 125°C | |||
JANTXV1N5819-1/TR | DIODE SMALL-SIGNAL SCHOTTKY | Microchip Technology | DO-204AL, DO-41, Axial | 1A | Schottky | Through Hole | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 45V | 70pF @ 5V, 1MHz | 490mV @ 1A | 45V | -65°C ~ 125°C | Military, MIL-PRF-19500/586 | |
UPS5819/TR7 | DIODE SCHOTTKY 40V 1A POWERMITE | Microchip Technology | DO-216AA | 1A | Schottky | Surface Mount | Powermite | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 40V | 550mV @ 1A | 40V | -55°C ~ 150°C |
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