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- Емкость @ Vr, F
- Прямое напряжение
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Средний выпрямленный ток (Io) на диод
- Серия
Наименование | Описание | Производитель
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Package / Case
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Средний выпрямленный ток (Io)
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Тип диода
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Вид монтажа
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Тип корпуса
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Скорость
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Ток утечки
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Емкость @ Vr, F
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Прямое напряжение
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Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Серия
|
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1N6626/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1.75A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 220V | 40pF @ 10V, 1MHz | 1.35V @ 2A | 220V | 30ns | -65°C ~ 150°C | ||
JANTXV1N6627 | DIODE GEN PURP 440V 1.75A AXIAL | Microchip Technology | E, Axial | 1.75A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 440V | 40pF @ 10V, 1MHz | 1.35V @ 2A | 440V | 30ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 | |
JANTXV1N6628 | DIODE GEN PURP 660V 1.75A AXIAL | Microchip Technology | E, Axial | 1.75A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 660V | 40pF @ 10V, 1MHz | 1.35V @ 2A | 660V | 30ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 | |
JANTX1N6627US | DIODE GEN PURP 440V 1.75A D5B | Microchip Technology | SQ-MELF, E | 1.75A | Standard | Surface Mount | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 440V | 40pF @ 10V, 1MHz | 1.35V @ 2A | 440V | 30ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 |
JANTXV1N6626 | DIODE GEN PURP 220V 1.75A AXIAL | Microchip Technology | E, Axial | 1.75A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 220V | 40pF @ 10V, 1MHz | 1.35V @ 2A | 220V | 30ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 | |
JANTX1N6626US | DIODE GEN PURP 200V 1.75A D5B | Microchip Technology | SQ-MELF, E | 1.75A | Standard | Surface Mount | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 200V | 1.35V @ 2A | 200V | 45ns | -65°C ~ 150°C | Military, MIL-PRF-19500/578 | |
JANTXV1N6627U/TR | RECTIFIER UFR,FRR | Microchip Technology | SQ-MELF, E | 1.75A | Standard | Surface Mount | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 400V | 1.35V @ 2A | 400V | 30ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 | |
1N6627US/TR | RECTIFIER UFR,FRR | Microchip Technology | SQ-MELF, A | 1.75A | Standard | Surface Mount | A-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 440V | 40pF @ 10V, 1MHz | 1.35V @ 2A | 440V | 30ns | -65°C ~ 150°C | |
JAN1N6627US | DIODE GEN PURP 440V 1.75A D5B | Microchip Technology | SQ-MELF, E | 1.75A | Standard | Surface Mount | D-5B | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 440V | 40pF @ 10V, 1MHz | 1.35V @ 1.2A | 440V | 30ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 |
JANTX1N6627/TR | RECTIFIER UFR,FRR | Microchip Technology | E, Axial | 1.75A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 440V | 40pF @ 10V, 1MHz | 1.35V @ 2A | 440V | 30ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 | |
JAN1N6627 | DIODE GEN PURP 440V 1.75A AXIAL | Microchip Technology | E, Axial | 1.75A | Standard | Through Hole | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 440V | 40pF @ 10V, 1MHz | 1.35V @ 1.2A | 440V | 30ns | -65°C ~ 150°C | Military, MIL-PRF-19500/590 |
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