• Емкость @ Vr, F
    • Прямое напряжение
    • Обратное постоянное напряжение (Vr) (Max)
    • Время обратного восстановления (trr)
    • Рабочая температура перехода
    • Конфигурация диода
    • Средний выпрямленный ток (Io) на диод
    • Серия
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Списком Таблицей
Найдено: 56
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Серия
JAN1N6628/TR RECTIFIER UFR,FRR Microchip Technology E, Axial 1.75A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 600V 1.35V @ 1.2A 660V 30ns -65°C ~ 175°C Military, MIL-PRF-19500/590
JAN1N6627US/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, E 1.75A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 440V 40pF @ 10V, 1MHz 1.35V @ 1.2A 440V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
MNS1N6627US/TR UFR,FRR Microchip Technology SQ-MELF, B 1.75A Standard Surface Mount E-MELF Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 440V 1.35V @ 2A 440V 30ns -65°C ~ 150°C
1N6626 DIODE GEN PURP 220V 1.75A AXIAL Microchip Technology A, Axial 1.75A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 220V 40pF @ 10V, 1MHz 1.35V @ 2A 220V 30ns -65°C ~ 150°C
1N6627US DIODE GEN PURP 440V 1.75A A-MELF Microchip Technology SQ-MELF, A 1.75A Standard Surface Mount A-MELF Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 440V 40pF @ 10V, 1MHz 1.35V @ 2A 440V 30ns -65°C ~ 150°C
JANTXV1N6628US DIODE GEN PURP 660V 1.75A D5B Microchip Technology SQ-MELF, E 1.75A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 660V 40pF @ 10V, 1MHz 1.35V @ 2A 660V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JAN1N6626/TR RECTIFIER UFR,FRR Microchip Technology E, Axial 1.75A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 220V 40pF @ 10V, 1MHz 1.35V @ 1.2A 220V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
1N6627 DIODE GEN PURP 440V 1.75A AXIAL Microchip Technology A, Axial 1.75A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 440V 40pF @ 10V, 1MHz 1.35V @ 2A 440V 30ns -65°C ~ 150°C
JANTX1N6626U/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, A 1.75A Standard Surface Mount D-5A Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 200V 1.35V @ 2A 200V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JAN1N6626US/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, E 1.75A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 220V 40pF @ 10V, 1MHz 1.35V @ 1.2A 220V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JANTXV1N6627U DIODE GEN PURP 400V 1.75A E-MELF Microchip Technology SQ-MELF, E 1.75A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 400V 1.35V @ 2A 400V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JANTX1N6628/TR RECTIFIER UFR,FRR Microchip Technology E, Axial 1.75A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 660V 40pF @ 10V, 1MHz 1.35V @ 2A 660V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JANTX1N6628 DIODE GEN PURP 660V 1.75A AXIAL Microchip Technology E, Axial 1.75A Standard Through Hole Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 660V 40pF @ 10V, 1MHz 1.35V @ 2A 660V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JANTX1N6628US DIODE GEN PURP 660V 1.75A D5B Microchip Technology SQ-MELF, E 1.75A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 660V 40pF @ 10V, 1MHz 1.35V @ 2A 660V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
JANTX1N6627U/TR RECTIFIER UFR,FRR Microchip Technology SQ-MELF, E 1.75A Standard Surface Mount D-5B Fast Recovery =< 500ns, > 200mA (Io) 2µA @ 400V 1.35V @ 2A 400V 30ns -65°C ~ 150°C Military, MIL-PRF-19500/590
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