- Производитель
- Средний выпрямленный ток (Io)
-
- Емкость @ Vr, F
- Прямое напряжение
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIDC14D60E6X1SA3 | DIODE SWITCHING 600V WAFER | Infineon Technologies | Die | 30A (DC) | Standard | Surface Mount | Die | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 600V | 1.25V @ 30A | 600V | -55°C ~ 150°C | |||||
| DD171N16KHPSA2 | DIODE | Infineon Technologies | Module | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 20mA @ 1600V | 1.26V @ 500A | 1600V | 150°C | 1 Pair Series Connection | 171A | DD171N | ||||
| DD89N14KHPSA1 | DIODE MODULE GP 1400V 89A | Infineon Technologies | Module | Standard | Chassis Mount | Module | Standard Recovery >500ns, > 200mA (Io) | 20mA @ 1400V | 1.5V @ 300A | 1400V | -40°C ~ 150°C | 1 Pair Common Cathode | 89A | ||||
| ND350N12KHPSA1 | DIODE GP 1.2KV 350A BG-PB50ND-1 | Infineon Technologies | Module | 350A | Standard | Chassis Mount | BG-PB50ND-1 | Standard Recovery >500ns, > 200mA (Io) | 30mA @ 1200V | 1200V | -40°C ~ 135°C | ||||||
| BAT1502LSE6433XTMA1 | DIODE SCHOTTKY 4V 110MA TSSLP-2 | Infineon Technologies | 0201 (0603 Metric) | 110mA (DC) | Schottky | Surface Mount | PG-TSSLP-2-3 | Small Signal =< 200mA (Io), Any Speed | 5µA @ 1V | 350pF @ 0V, 1MHz | 410mV @ 10mA | 4V | -55°C ~ 150°C | ||||
| IRD3CH5BD6 | DIODE CHIP EMITTER CONTROLLED | Infineon Technologies | |||||||||||||||
| D1381S45TXPSA1 | DIODE GEN PURP 4.5KV 1630A | Infineon Technologies | DO-200AD | 1630A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 100mA @ 4500V | 2.6V @ 2500A | 4500V | -40°C ~ 140°C | ||||||
| BAS 16-02V E6327 | DIODE GEN PURP 80V 200MA SC79-2 | Infineon Technologies | SC-79, SOD-523 | 200mA (DC) | Standard | Surface Mount | PG-SC79-2 | Small Signal =< 200mA (Io), Any Speed | 1µA @ 75V | 2pF @ 0V, 1MHz | 1.25V @ 150mA | 80V | 4ns | 150°C (Max) | |||
| IDW40G65C5B | IDW40G65 - COOLSIC SCHOTTKY DIOD | Infineon Technologies | TO-247-3 | Silicon Carbide Schottky | Through Hole | PG-TO247-3-41 | No Recovery Time > 500mA (Io) | 210µA @ 650V | 1.7V @ 20A | 650V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 20A (DC) | |||
| D2450N07TXPSA1 | DIODE GEN PURP 700V 2450A | Infineon Technologies | DO-200AB, B-PUK | 2450A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 50mA @ 700V | 880mV @ 2000A | 700V | -40°C ~ 180°C | ||||||
| AIDW30E60 | DIODE GEN PURP 600V 30A TO247-3 | Infineon Technologies | |||||||||||||||
| IDH12G65C6XKSA1 | DIODE SCHOTTKY 650V 27A TO220-2 | Infineon Technologies | TO-220-2 | 27A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2 | No Recovery Time > 500mA (Io) | 40µA @ 420V | 594pF @ 1V, 1MHz | 1.35V @ 12A | 650V | 0ns | -55°C ~ 175°C | |||
| BAS125-04WE6327 | RECTIFIER DIODE, SCHOTTKY | Infineon Technologies | SC-70, SOT-323 | Schottky | Surface Mount | PG-SOT323-3 | Small Signal =< 200mA (Io), Any Speed | 150nA @ 25V | 950mV @ 35mA | 25V | 150°C | 1 Pair Series Connection | 100mA (DC) | ||||
| BAT6404E6327 | RECTIFIER DIODE, SCHOTTKY | Infineon Technologies | TO-236-3, SC-59, SOT-23-3 | Schottky | Surface Mount | PG-SOT23 | Small Signal =< 200mA (Io), Any Speed | 2µA @ 30V | 750mV @ 100mA | 40V | 5ns | 150°C (Max) | 1 Pair Series Connection | 120mA | |||
| IDH02SG120XKSA1 | DIODE SCHOTTKY 1200V 2A TO220-2 | Infineon Technologies | TO-220-2 | 2A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2-2 | No Recovery Time > 500mA (Io) | 48µA @ 1200V | 125pF @ 1V, 1MHz | 1.8V @ 2A | 1200V | 0ns | -55°C ~ 175°C | CoolSiC™+ |
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