• Производитель
  • Средний выпрямленный ток (Io)
    • Емкость @ Vr, F
    • Прямое напряжение
    • Обратное постоянное напряжение (Vr) (Max)
    • Время обратного восстановления (trr)
    • Рабочая температура перехода
    • Конфигурация диода
    • Средний выпрямленный ток (Io) на диод
    • Серия
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Списком Таблицей
Найдено: 184
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Конфигурация диода
Средний выпрямленный ток (Io) на диод
G5S12002H SIC SCHOTTKY DIODE 1200V 2A 2-PI Global Power Technology-GPT TO-220-2 Full Pack 7.5A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 1200V 170pF @ 0V, 1MHz 1.7V @ 2A 1200V 0ns -55°C ~ 175°C
G5S06506DT SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 24A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.5V @ 6A 650V 0ns -55°C ~ 175°C
GAS06520L SIC SCHOTTKY DIODE 650V 20A 3-PI Global Power Technology-GPT TO-247-3 66.5A (DC) Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 650V 1390pF @ 0V, 1MHz 1.7V @ 20A 650V 0ns -55°C ~ 175°C
G3S12015P SIC SCHOTTKY DIODE 1200V 15A 2-P Global Power Technology-GPT TO-247-2 42A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 1200V 1379pF @ 0V, 1MHz 1.7V @ 15A 1200V 0ns -55°C ~ 175°C
G3S12010P SIC SCHOTTKY DIODE 1200V 10A 2-P Global Power Technology-GPT TO-247-2 37A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 1200V 765pF @ 0V, 1MHz 1.7V @ 110A 1200V 0ns -55°C ~ 175°C
G5S06506HT SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-220-2 Full Pack 18.5A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.5V @ 6A 650V 0ns -55°C ~ 175°C
G5S6506Z SIC SCHOTTKY DIODE 650V 6A DFN5* Global Power Technology-GPT 8-PowerTDFN 30.5A (DC) Silicon Carbide Schottky Surface Mount 8-DFN (4.9x5.75) No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.5V @ 6A 650V 0ns -55°C ~ 175°C
G4S06506CT SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 13.8A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.8V @ 6A 650V 0ns -55°C ~ 175°C
G3S12002C SIC SCHOTTKY DIODE 1200V 2A 2-PI Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 8.8A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 1200V 170pF @ 0V, 1MHz 1.7V @ 2A 1200V 0ns -55°C ~ 175°C
G5S12016BM SIC SCHOTTKY DIODE 1200V 16A 3-P Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 1200V 1.7V @ 8A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 27.9A (DC)
G4S06530BT SIC SCHOTTKY DIODE 650V 30A 3-PI Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 650V 1.7V @ 15A 650V 0ns -55°C ~ 175°C 1 Pair Common Cathode 39A (DC)
G4S12010PM SIC SCHOTTKY DIODE 1200V 10A 2-P Global Power Technology-GPT TO-247-2 33.2A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 30µA @ 1700V 1200V 0ns -55°C ~ 175°C
G5S12015PM SIC SCHOTTKY DIODE 1200V 15A 2-P Global Power Technology-GPT TO-247-2 55A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 1200V 1370pF @ 0V, 1MHz 1.7V @ 15A 1200V 0ns -55°C ~ 175°C
G3S06504D SIC SCHOTTKY DIODE 650V 4A 2-PIN Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 11.5A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 4A 650V 0ns -55°C ~ 175°C
G4S06508HT SIC SCHOTTKY DIODE 650V 8A 2-PIN Global Power Technology-GPT TO-220-2 Full Pack 18.5A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
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