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G5S06508AT
|
SIC SCHOTTKY DIODE 650V 8A 2-PIN |
Global Power Technology-GPT |
TO-220-2 |
30.5A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
550pF @ 0V, 1MHz |
1.5V @ 8A |
650V |
0ns |
-55°C ~ 175°C |
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G4S06508DT
|
SIC SCHOTTKY DIODE 650V 8A 2-PIN |
Global Power Technology-GPT |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
24A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-263 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
395pF @ 0V, 1MHz |
1.7V @ 8A |
650V |
0ns |
-55°C ~ 175°C |
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G3S06510A
|
SIC SCHOTTKY DIODE 650V 10A 2-PI |
Global Power Technology-GPT |
TO-220-2 |
35A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
690pF @ 0V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
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G3S12010H
|
SIC SCHOTTKY DIODE 1200V 10A 2-P |
Global Power Technology-GPT |
TO-220-2 Full Pack |
16.5A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
765pF @ 0V, 1MHz |
1.7V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
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G5S12008H
|
SIC SCHOTTKY DIODE 1200V 8A 2-PI |
Global Power Technology-GPT |
TO-220-2 Full Pack |
16A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
550pF @ 0V, 1MHz |
1.7V @ 8A |
1200V |
0ns |
-55°C ~ 175°C |
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G3S12020B
|
SIC SCHOTTKY DIODE 1200V 20A 3-P |
Global Power Technology-GPT |
TO-247-2 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AC |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
|
1.7V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
37A (DC) |
|
G5S12008D
|
SIC SCHOTTKY DIODE 1200V 8A 2-PI |
Global Power Technology-GPT |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
26.1A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-263 |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
550pF @ 0V, 1MHz |
1.7V @ 8A |
1200V |
0ns |
-55°C ~ 175°C |
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G3S06560B
|
SIC SCHOTTKY DIODE 650V 4A 3-PIN |
Global Power Technology-GPT |
TO-247-3 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
|
1.7V @ 30A |
650V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
95A (DC) |
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G5S06504QT
|
SIC SCHOTTKY DIODE 650V 4A DFN 8 |
Global Power Technology-GPT |
4-PowerTSFN |
14A (DC) |
Silicon Carbide Schottky |
Surface Mount |
4-DFN (8x8) |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.55V @ 4A |
650V |
0ns |
-55°C ~ 175°C |
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G3S06505A
|
SIC SCHOTTKY DIODE 650V 5A 2-PIN |
Global Power Technology-GPT |
TO-220-2 |
22.6A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
424pF @ 0V, 1MHz |
1.7V @ 5A |
650V |
0ns |
-55°C ~ 175°C |
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G3S12015L
|
SIC SCHOTTKY DIODE 1200V 15A 3-P |
Global Power Technology-GPT |
TO-247-3 |
55A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
1700pF @ 0V, 1MHz |
1.7V @ 15A |
1200V |
0ns |
-55°C ~ 175°C |
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G3S17020B
|
SIC SCHOTTKY DIODE 1700V 20A 3-P |
Global Power Technology-GPT |
TO-247-3 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
100µA @ 1700V |
|
1.7V @ 10A |
1700V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
24A (DC) |
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G3S06504C
|
SIC SCHOTTKY DIODE 650V 4A 2-PIN |
Global Power Technology-GPT |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
11.5A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-252 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 4A |
650V |
0ns |
-55°C ~ 175°C |
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G5S12015L
|
SIC SCHOTTKY DIODE 1200V 15A 3-P |
Global Power Technology-GPT |
TO-247-3 |
55A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
1370pF @ 0V, 1MHz |
1.7V @ 15A |
1200V |
0ns |
-55°C ~ 175°C |
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G5S06506CT
|
SIC SCHOTTKY DIODE 650V 6A 2-PIN |
Global Power Technology-GPT |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
24A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-252 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
395pF @ 0V, 1MHz |
1.5V @ 6A |
650V |
0ns |
-55°C ~ 175°C |
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