• Производитель
  • Средний выпрямленный ток (Io)
Найдено: 184
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Конфигурация диода
Средний выпрямленный ток (Io) на диод
G4S12020BM SIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 30µA @ 1200V 1.6V @ 10A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 33.2A (DC)
G3S06506C SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 22.5A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 424pF @ 0V, 1MHz 1.7V @ 6A 650V 0ns -55°C ~ 175°C
G4S06510PT SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology-GPT TO-247-2 31.2A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
GAS06520A SIC SCHOTTKY DIODE 650V 20A 2-PI Global Power Technology-GPT TO-220-2 66A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 1390pF @ 0V, 1MHz 1.7V @ 20A 650V 0ns -55°C ~ 175°C
G3S17005C SIC SCHOTTKY DIODE 1700V 5A 2-PI Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 27A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 1700V 780pF @ 0V, 1MHz 1.7V @ 5A 1700V 0ns -55°C ~ 175°C
G5S12010A SIC SCHOTTKY DIODE 1200V 10A 2-P Global Power Technology-GPT TO-220-2 37A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 1200V 1200V 0ns -55°C ~ 175°C
G5S06505DT SIC SCHOTTKY DIODE 650V 5A 2-PIN Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 24A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.5V @ 5A 650V 0ns -55°C ~ 175°C
G5S06508QT SIC SCHOTTKY DIODE 650V 8A DFN8* Global Power Technology-GPT 4-PowerTSFN 44.9A (DC) Silicon Carbide Schottky Surface Mount 4-DFN (8x8) No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.5V @ 8A 650V 0ns -55°C ~ 175°C
G3S06508J SIC SCHOTTKY DIODE 650V 8A 2-PIN Global Power Technology-GPT TO-220-2 Isolated Tab 23A (DC) Silicon Carbide Schottky Through Hole TO-220ISO No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
G3S06502H SIC SCHOTTKY DIODE 650V 2A 2-PIN Global Power Technology-GPT TO-220-2 Full Pack 9A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 650V 123pF @ 0V, 1MHz 1.7V @ 2A 650V 0ns -55°C ~ 175°C
G3S12005H SIC SCHOTTKY DIODE 1200V 5A 2-PI Global Power Technology-GPT TO-220-2 Full Pack 21A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 1200V 475pF @ 0V, 1MHz 1.7V @ 5A 1200V 0ns -55°C ~ 175°C
G3S06520A SIC SCHOTTKY DIODE 650V 20A 2-PI Global Power Technology-GPT TO-220-2 56.5A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 1170pF @ 0V, 1MHz 1.7V @ 20A 650V 0ns -55°C ~ 175°C
G3S12004B SIC SCHOTTKY DIODE 1200V 4A 3-PI Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 1200V 1.7V @ 2A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 8.5A (DC)
G4S06515CT SIC SCHOTTKY DIODE 650V 15A 2-PI Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 35.8A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 645pF @ 0V, 1MHz 1.7V @ 15A 650V 0ns -55°C ~ 175°C
G3S17010A SIC SCHOTTKY DIODE 1700V 10A 2-P Global Power Technology-GPT TO-220-2 24A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 100µA @ 1700V 1500pF @ 0V, 1MHz 1.7V @ 10A 1700V 0ns -55°C ~ 175°C