G3S06510B
|
SIC SCHOTTKY DIODE 650V 10A 3-PI |
Global Power Technology Co. Ltd |
TO-247-3 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
|
1.7V @ 5A |
650V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
27A (DC) |
G5S06506CT
|
SIC SCHOTTKY DIODE 650V 6A 2-PIN |
Global Power Technology Co. Ltd |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
24A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-252 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
395pF @ 0V, 1MHz |
1.5V @ 6A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G5S06505AT
|
SIC SCHOTTKY DIODE 650V 5A 2-PIN |
Global Power Technology Co. Ltd |
TO-220-2 |
24.5A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
395pF @ 0V, 1MHz |
1.5V @ 5A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G3S12020B
|
SIC SCHOTTKY DIODE 1200V 20A 3-P |
Global Power Technology Co. Ltd |
TO-247-2 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AC |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
|
1.7V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
37A (DC) |
G3S12010D
|
SIC SCHOTTKY DIODE 1200V 10A 2-P |
Global Power Technology Co. Ltd |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
33.2A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-263 |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
765pF @ 0V, 1MHz |
1.7V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
|
|
G4S12040BM
|
SIC SCHOTTKY DIODE 1200V 40A 3-P |
Global Power Technology Co. Ltd |
TO-247-3 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
30µA @ 1200V |
|
1.6V @ 20A |
1200V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
64.5A (DC) |
G3S06504B
|
SIC SCHOTTKY DIODE 650V 4A 3-PIN |
Global Power Technology Co. Ltd |
TO-247-3 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
|
1.7V @ 4A |
650V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
9A (DC) |
G5S12020BM
|
SIC SCHOTTKY DIODE 1200V 20A 3-P |
Global Power Technology Co. Ltd |
TO-247-3 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
30µA @ 1200V |
|
1.7V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
33A (DC) |
G5S12010PM
|
SIC SCHOTTKY DIODE 1200V 10A 2-P |
Global Power Technology Co. Ltd |
TO-247-2 |
33A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-247AC |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
825pF @ 0V, 1MHz |
1.7V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
|
|
G3S17010A
|
SIC SCHOTTKY DIODE 1700V 10A 2-P |
Global Power Technology Co. Ltd |
TO-220-2 |
24A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
100µA @ 1700V |
1500pF @ 0V, 1MHz |
1.7V @ 10A |
1700V |
0ns |
-55°C ~ 175°C |
|
|
G5S06504HT
|
SIC SCHOTTKY DIODE 650V 4A 2-PIN |
Global Power Technology Co. Ltd |
TO-220-2 Full Pack |
9.7A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.6V @ 4A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G5S06504AT
|
SIC SCHOTTKY DIODE 650V 4A 2-PIN |
Global Power Technology Co. Ltd |
TO-220-2 |
11.6A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.6V @ 4A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G5S6506Z
|
SIC SCHOTTKY DIODE 650V 6A DFN5 |
Global Power Technology Co. Ltd |
8-PowerTDFN |
30.5A (DC) |
Silicon Carbide Schottky |
Surface Mount |
8-DFN (4.9x5.75) |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
395pF @ 0V, 1MHz |
1.5V @ 6A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G3S06505H
|
SIC SCHOTTKY DIODE 650V 5A 2-PIN |
Global Power Technology Co. Ltd |
TO-220-2 Full Pack |
15.4A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
424pF @ 0V, 1MHz |
1.7V @ 5A |
650V |
0ns |
-55°C ~ 175°C |
|
|
G4S06510JT
|
SIC SCHOTTKY DIODE 650V 10A 2-PI |
Global Power Technology Co. Ltd |
TO-220-2 Isolated Tab |
31.2A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220ISO |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
550pF @ 0V, 1MHz |
1.7V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
|
|