|
G5S06508QT
|
SIC SCHOTTKY DIODE 650V 8A DFN8* |
Global Power Technology Co. Ltd |
4-PowerTSFN |
44.9A (DC) |
Silicon Carbide Schottky |
Surface Mount |
4-DFN (8x8) |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
550pF @ 0V, 1MHz |
1.5V @ 8A |
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G3S17005A
|
SIC SCHOTTKY DIODE 1700V 5A 2-PI |
Global Power Technology Co. Ltd |
TO-220-2 |
28A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 1700V |
780pF @ 0V, 1MHz |
1.7V @ 5A |
1700V |
0ns |
-55°C ~ 175°C |
|
|
|
G4S12020P
|
SIC SCHOTTKY DIODE 1200V 20A 2-P |
Global Power Technology Co. Ltd |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
G5S06506QT
|
SIC SCHOTTKY DIODE 650V 6A DFN8* |
Global Power Technology Co. Ltd |
4-PowerTSFN |
34A (DC) |
Silicon Carbide Schottky |
Surface Mount |
4-DFN (8x8) |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
395pF @ 0V, 1MHz |
1.5V @ 6A |
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G3S06560B
|
SIC SCHOTTKY DIODE 650V 4A 3-PIN |
Global Power Technology Co. Ltd |
TO-247-3 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
|
1.7V @ 30A |
650V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
95A (DC) |
|
G5S12002H
|
SIC SCHOTTKY DIODE 1200V 2A 2-PI |
Global Power Technology Co. Ltd |
TO-220-2 Full Pack |
7.5A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
170pF @ 0V, 1MHz |
1.7V @ 2A |
1200V |
0ns |
-55°C ~ 175°C |
|
|
|
G5S06506HT
|
SIC SCHOTTKY DIODE 650V 6A 2-PIN |
Global Power Technology Co. Ltd |
TO-220-2 Full Pack |
18.5A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220F |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
395pF @ 0V, 1MHz |
1.5V @ 6A |
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G3S12002A
|
SIC SCHOTTKY DIODE 1200V 2A 2-PI |
Global Power Technology Co. Ltd |
TO-220-2 |
7A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
136pF @ 0V, 1MHz |
1.7V @ 2A |
1200V |
0ns |
-55°C ~ 175°C |
|
|
|
G4S06530BT
|
SIC SCHOTTKY DIODE 650V 30A 3-PI |
Global Power Technology Co. Ltd |
TO-247-3 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
|
1.7V @ 15A |
650V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
39A (DC) |
|
G5S06510AT
|
SIC SCHOTTKY DIODE 650V 10A 2-PI |
Global Power Technology Co. Ltd |
TO-220-2 |
36A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
645pF @ 0V, 1MHz |
1.5V @ 10A |
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G3S12010BM
|
SIC SCHOTTKY DIODE 1200V 10A 3-P |
Global Power Technology Co. Ltd |
TO-247-3 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
50µA @ 1200V |
|
1.7V @ 5A |
1200V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
19.8A (DC) |
|
G3S06530PM
|
SIC SCHOTTKY DIODE 650V 30A 2-PI |
Global Power Technology Co. Ltd |
TO-247-2 |
92A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-247AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
|
1.7V @ 30A |
650V |
0ns |
|
|
|
|
G3S06504A
|
SIC SCHOTTKY DIODE 650V 4A 2-PIN |
Global Power Technology Co. Ltd |
TO-220-2 |
11.5A (DC) |
Silicon Carbide Schottky |
Through Hole |
TO-220AC |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.7V @ 4A |
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G4S06506CT
|
SIC SCHOTTKY DIODE 650V 6A 2-PIN |
Global Power Technology Co. Ltd |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
13.8A (DC) |
Silicon Carbide Schottky |
Surface Mount |
TO-252 |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
181pF @ 0V, 1MHz |
1.8V @ 6A |
650V |
0ns |
-55°C ~ 175°C |
|
|
|
G3S06508B
|
SIC SCHOTTKY DIODE 650V 8A 3-PIN |
Global Power Technology Co. Ltd |
TO-247-3 |
|
Silicon Carbide Schottky |
Through Hole |
TO-247AB |
No Recovery Time > 500mA (Io) |
50µA @ 650V |
|
1.7V @ 8A |
650V |
0ns |
-55°C ~ 175°C |
1 Pair Common Cathode |
14A (DC) |