- Производитель
- Средний выпрямленный ток (Io)
-
- Емкость @ Vr, F
- Прямое напряжение
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Средний выпрямленный ток (Io) на диод
- Серия
Наименование | Описание | Производитель
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Package / Case
|
Средний выпрямленный ток (Io)
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Тип диода
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Вид монтажа
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Тип корпуса
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Скорость
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Ток утечки
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Емкость @ Vr, F
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Прямое напряжение
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Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
Серия
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MBR20080CTR | DIODE MODULE 80V 200A 2TOWER | GeneSiC Semiconductor | Twin Tower | Schottky | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 840mV @ 100A | 80V | 1 Pair Common Anode | 200A (DC) | |||||
MBRT60045RL | DIODE SCHOTTKY 45V 300A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 45V | 600mV @ 300A | 45V | -55°C ~ 150°C | 1 Pair Common Anode | 300A | ||||
GD10MPS12A | 1200V 10A TO-220-2 SIC SCHOTTKY | GeneSiC Semiconductor | TO-220-2 | 25A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 5µA @ 1200V | 367pF @ 1V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C | SiC Schottky MPS™ | ||
MSRTA500100(A) | DIODE MODULE 1KV 500A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 600V | 1.2V @ 500A | 1000V | -55°C ~ 150°C | 1 Pair Common Cathode | 500A (DC) | ||||
MBR50045CTR | DIODE MODULE 45V 250A 2TOWER | GeneSiC Semiconductor | Twin Tower | Schottky, Reverse Polarity | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 250A | 45V | -55°C ~ 150°C | 1 Pair Common Anode | 250A | ||||
MBRTA80020RL | DIODE SCHOTTKY 20V 400A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 20V | 580mV @ 400A | 20V | -55°C ~ 150°C | 1 Pair Common Anode | 400A | ||||
MBRF30035 | DIODE SCHOTTKY 35V 150A TO244AB | GeneSiC Semiconductor | TO-244AB | Schottky | Chassis Mount | TO-244AB | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 35V | 700mV @ 150A | 35V | -55°C ~ 150°C | 1 Pair Common Cathode | 150A | ||||
MSRT250100(A) | DIODE MODULE 1KV 250A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 15µA @ 600V | 1.2V @ 250A | 1000V | -55°C ~ 150°C | 1 Pair Common Cathode | 250A (DC) | ||||
GKR71/04 | DIODE GEN PURP 400V 95A DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 95A | Standard | Chassis, Stud Mount | DO-5 | Standard Recovery >500ns, > 200mA (Io) | 10mA @ 400V | 1.5V @ 60A | 400V | -40°C ~ 180°C | |||||
1N4588R | DIODE GEN PURP 200V 150A DO205AA | GeneSiC Semiconductor | DO-205AA, DO-8, Stud | 150A | Standard, Reverse Polarity | Chassis, Stud Mount | DO-205AA (DO-8) | Standard Recovery >500ns, > 200mA (Io) | 9.5mA @ 200V | 1.5V @ 150A | 200V | -60°C ~ 200°C | |||||
MURH10060R | DIODE GEN PURP 600V 100A D-67 | GeneSiC Semiconductor | D-67 | 100A | Standard, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 600V | 1.7V @ 100A | 600V | 110ns | |||||
MBRF40040R | DIODE SCHOTTKY 40V 200A TO244AB | GeneSiC Semiconductor | TO-244AB | Schottky | Chassis Mount | TO-244AB | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 40V | 700mV @ 200A | 40V | -55°C ~ 150°C | 1 Pair Common Anode | 200A | ||||
MURF40010R | DIODE GEN PURP 100V 200A TO244 | GeneSiC Semiconductor | TO-244AB | Standard | Chassis Mount | TO-244 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 100V | 1V @ 200A | 100V | 150ns | -55°C ~ 150°C | 1 Pair Common Anode | 200A | |||
S16J | DIODE GEN PURP 600V 16A DO203AA | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 16A | Standard | Chassis, Stud Mount | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 50V | 1.1V @ 16A | 600V | -65°C ~ 175°C | ||||||
FR30G02 | DIODE GEN PURP 400V 30A DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 30A | Standard | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1V @ 30A | 400V | 200ns | -40°C ~ 125°C |
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