• Производитель
  • Средний выпрямленный ток (Io)
    • Емкость @ Vr, F
    • Прямое напряжение
    • Обратное постоянное напряжение (Vr) (Max)
    • Время обратного восстановления (trr)
    • Рабочая температура перехода
    • Конфигурация диода
    • Средний выпрямленный ток (Io) на диод
    • Серия
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Списком Таблицей
Найдено: 1782
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Конфигурация диода
Средний выпрямленный ток (Io) на диод
Серия
FR12J05 DIODE GEN PURP 600V 12A DO4 GeneSiC Semiconductor DO-203AA, DO-4, Stud 12A Standard Chassis, Stud Mount DO-4 Fast Recovery =< 500ns, > 200mA (Io) 25µA @ 100V 800mV @ 12A 600V 500ns -65°C ~ 150°C
MBRT60020L DIODE SCHOTTKY 20V 300A 3 TOWER GeneSiC Semiconductor Three Tower Schottky Chassis Mount Three Tower Fast Recovery =< 500ns, > 200mA (Io) 3mA @ 20V 580mV @ 300A 20V -55°C ~ 150°C 1 Pair Common Cathode 300A
MURF10005R DIODE MODULE 50V 50A TO244 GeneSiC Semiconductor TO-244AB Standard Chassis Mount TO-244 Fast Recovery =< 500ns, > 200mA (Io) 25µA @ 50V 1.3V @ 50A 50V 75ns -55°C ~ 150°C 1 Pair Common Anode 50A
S40Q DIODE GEN PURP 1.2KV 40A DO5 GeneSiC Semiconductor DO-203AB, DO-5, Stud 40A Standard Chassis, Stud Mount DO-5 Standard Recovery >500ns, > 200mA (Io) 10µA @ 100V 1.1V @ 40A 1200V -65°C ~ 190°C
GB01SLT12-252 DIODE SILICON 1.2KV 1A TO252 GeneSiC Semiconductor TO-252-3, DPak (2 Leads + Tab), SC-63 1A Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 2µA @ 1200V 69pF @ 1V, 1MHz 1.8V @ 1A 1200V 0ns -55°C ~ 175°C SiC Schottky MPS™
MBR400150CT DIODE SCHOTTKY 150V 200A 2 TOWER GeneSiC Semiconductor Twin Tower Schottky Chassis Mount Twin Tower Fast Recovery =< 500ns, > 200mA (Io) 3mA @ 150V 880mV @ 200A 150V -55°C ~ 150°C 1 Pair Common Cathode 200A
MBRTA40030RL DIODE SCHOTTKY 30V 200A 3TOWER GeneSiC Semiconductor Three Tower Schottky Chassis Mount Three Tower Fast Recovery =< 500ns, > 200mA (Io) 3mA @ 30V 580mV @ 200A 30V -55°C ~ 150°C 1 Pair Common Anode 200A
FR12B02 DIODE GEN PURP 100V 12A DO4 GeneSiC Semiconductor DO-203AA, DO-4, Stud 12A Standard Chassis, Stud Mount DO-4 Fast Recovery =< 500ns, > 200mA (Io) 25µA @ 100V 800mV @ 12A 100V 200ns -65°C ~ 150°C
FST8335M DIODE MODULE 35V 80A D61-3M GeneSiC Semiconductor D61-3M Schottky Chassis Mount D61-3M Fast Recovery =< 500ns, > 200mA (Io) 1.5mA @ 20V 650mV @ 80A 35V -55°C ~ 150°C 1 Pair Common Cathode 80A (DC)
MURH7060R DIODE GEN PURP 600V 70A D-67 GeneSiC Semiconductor D-67 70A Standard Chassis Mount D-67 Fast Recovery =< 500ns, > 200mA (Io) 25µA @ 600V 1.7V @ 70A 600V 110ns -55°C ~ 150°C
MBRH12045R DIODE SCHOTTKY 45V 120A D-67 GeneSiC Semiconductor D-67 HALF-PAK 120A Schottky, Reverse Polarity Chassis Mount D-67 Fast Recovery =< 500ns, > 200mA (Io) 1mA @ 45V 700mV @ 120A 45V -55°C ~ 150°C
S40G DIODE GEN PURP 400V 40A DO5 GeneSiC Semiconductor DO-203AB, DO-5, Stud 40A Standard Chassis, Stud Mount DO-5 Standard Recovery >500ns, > 200mA (Io) 10µA @ 100V 1.1V @ 40A 400V -65°C ~ 190°C
MSRT150120(A) DIODE MODULE 1.2KV 150A 3TOWER GeneSiC Semiconductor Three Tower Standard Chassis Mount Three Tower Standard Recovery >500ns, > 200mA (Io) 10µA @ 600V 1.2V @ 150A 1200V 1 Pair Common Cathode 150A (DC)
GD15MPS17H 1700V 15A TO-247-2 SIC SCHOTTKY GeneSiC Semiconductor TO-247-2 36A (DC) Silicon Carbide Schottky Through Hole TO-247-2 No Recovery Time > 500mA (Io) 20µA @ 1700V 1.082nF @ 1V, 1MHz 1.8V @ 15A 1700V 0ns -55°C ~ 175°C SiC Schottky MPS™
MBRTA800150R DIODE SCHOTTKY 150V 400A 3TOWER GeneSiC Semiconductor Three Tower Schottky Chassis Mount Three Tower Fast Recovery =< 500ns, > 200mA (Io) 5mA @ 150V 880mV @ 400A 150V -55°C ~ 150°C 1 Pair Common Anode 400A
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