- Производитель
- Средний выпрямленный ток (Io)
-
- Емкость @ Vr, F
- Прямое напряжение
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Средний выпрямленный ток (Io) на диод
- Серия
Наименование | Описание | Производитель
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Package / Case
|
Средний выпрямленный ток (Io)
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Тип диода
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Вид монтажа
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Тип корпуса
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Скорость
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Ток утечки
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Емкость @ Vr, F
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Прямое напряжение
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Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
Серия
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MBR2X160A100 | DIODE SCHOTTKY 100V 160A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 100V | 840mV @ 160A | 100V | -40°C ~ 150°C | 2 Independent | 160A | ||||
MURF10005 | DIODE MODULE 50V 50A TO244 | GeneSiC Semiconductor | TO-244AB | Standard | Chassis Mount | TO-244 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 50A | 50V | 75ns | -55°C ~ 150°C | 1 Pair Common Cathode | 50A | |||
MBRF60080R | DIODE SCHOTTKY 80V 300A TO244AB | GeneSiC Semiconductor | TO-244AB | Schottky | Chassis Mount | TO-244AB | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 80V | 840mV @ 250A | 80V | -55°C ~ 150°C | 1 Pair Common Anode | 300A | ||||
GC10MPS12-252 | SIC DIODE 1200V 10A TO-252-2 | GeneSiC Semiconductor | TO-252-3, DPak (2 Leads + Tab), SC-63 | 50A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252-2 | No Recovery Time > 500mA (Io) | 10µA @ 1200V | 660pF @ 1V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C | SiC Schottky MPS™ | ||
S70K | DIODE GEN PURP 800V 70A DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 70A | Standard | Chassis, Stud Mount | DO-5 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 100V | 1.1V @ 70A | 800V | -65°C ~ 180°C | |||||
MBR50040CTR | DIODE MODULE 40V 250A 2TOWER | GeneSiC Semiconductor | Twin Tower | Schottky | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 250A | 40V | -55°C ~ 150°C | 1 Pair Common Anode | 250A | ||||
MBRF12035R | DIODE SCHOTTKY 35V 60A TO244AB | GeneSiC Semiconductor | TO-244AB | Schottky | Chassis Mount | TO-244AB | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 35V | 700mV @ 60A | 35V | -55°C ~ 150°C | 1 Pair Common Anode | 60A | ||||
MSRTA40060A | DIODE MODULE 600V 400A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 600V | 1.2V @ 400A | 600V | -55°C ~ 150°C | 1 Pair Common Cathode | 400A (DC) | ||||
MBR2X120A120 | DIODE SCHOTTKY 120V 120A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 120V | 880mV @ 120A | 120V | -40°C ~ 150°C | 2 Independent | 120A | ||||
MBRTA600150 | DIODE SCHOTTKY 150V 300A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 150V | 880mV @ 300A | 150V | -55°C ~ 150°C | 1 Pair Common Cathode | 300A | ||||
MBR8045 | DIODE SCHOTTKY 45V 80A DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 80A | Schottky | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 45V | 650mV @ 80A | 45V | -55°C ~ 150°C | |||||
1N2137A | DIODE GEN PURP 500V 60A DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 60A | Standard | Chassis, Stud Mount | DO-5 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 50V | 1.1V @ 60A | 500V | -65°C ~ 200°C | |||||
MBR3580R | DIODE SCHOTTKY REV 80V DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 35A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 1.5mA @ 20V | 840mV @ 35A | 80V | -55°C ~ 150°C | |||||
MBRF20020R | DIODE SCHOTTKY 150V 100A TO244AB | GeneSiC Semiconductor | TO-244AB | Schottky | Chassis Mount | TO-244AB | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 150V | 880mV @ 100A | 150V | -55°C ~ 150°C | 1 Pair Common Anode | 100A | ||||
MBR12060CT | DIODE MODULE 60V 120A 2TOWER | GeneSiC Semiconductor | Twin Tower | Schottky | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 20V | 750mV @ 60A | 60V | -55°C ~ 150°C | 1 Pair Common Anode | 120A (DC) |
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