|
SBM1040-13-F
|
DIODE SCHOTTKY 40V 10A |
Diodes Incorporated |
Powermite®3 |
10A |
Schottky |
Surface Mount |
Powermite 3 |
Fast Recovery =< 500ns, > 200mA (Io) |
300µA @ 35V |
700pF @ 4V, 1MHz |
510mV @ 10A |
40V |
|
-65°C ~ 150°C |
|
|
PDS1040-13
|
DIODE SCHOTTKY 40V 10A POWERDI5 |
Diodes Incorporated |
PowerDI™ 5 |
10A |
Schottky |
Surface Mount |
PowerDI™ 5 |
Fast Recovery =< 500ns, > 200mA (Io) |
700µA @ 40V |
|
510mV @ 10A |
40V |
|
-65°C ~ 150°C |
|
|
DSS10-0045A
|
DIODE SCHOTTKY 45V 10A TO220AC |
IXYS |
TO-220-2 |
10A |
Schottky |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
300µA @ 45V |
|
680mV @ 10A |
45V |
|
-55°C ~ 175°C |
|
|
UPS1040E3/TR13
|
DIODE SCHOTTKY 40V 10A POWERMITE |
Microchip Technology |
Powermite®3 |
10A |
Schottky |
Surface Mount |
Powermite 3 |
Fast Recovery =< 500ns, > 200mA (Io) |
300µA @ 35V |
700pF @ 4V, 1MHz |
510mV @ 10A |
40V |
|
-55°C ~ 150°C |
|
|
FFPF10UP20STU
|
DIODE GP 200V 10A TO220F-2L |
onsemi |
TO-220-2 Full Pack |
10A |
Standard |
Through Hole |
TO-220F-2L |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 200V |
|
1.15V @ 10A |
200V |
35ns |
-65°C ~ 150°C |
|
|
UD1006FR-H
|
DIODE GEN PURP 600V 10A |
onsemi |
TO-220-2 |
10A |
Standard |
Through Hole |
|
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 600V |
|
1.3V @ 10A |
600V |
150ns |
150°C (Max) |
|
|
ST1050STR
|
DIODE SCHOTTKY 50V 10A TO277B |
SMC Diode Solutions |
TO-277, 3-PowerDFN |
10A |
Schottky |
Surface Mount |
TO-277B |
Fast Recovery =< 500ns, > 200mA (Io) |
1.5mA @ 50V |
|
550mV @ 10A |
50V |
|
-55°C ~ 150°C |
|
|
S4D10120H
|
DIODE SCHOTTKY SILICON CARBIDE S |
SMC Diode Solutions |
TO-247-2 |
10A |
Silicon Carbide Schottky |
Through Hole |
TO-247AC |
No Recovery Time > 500mA (Io) |
30µA @ 1200V |
772pF @ 0V, 1MHz |
1.8V @ 10A |
1200V |
0ns |
-55°C ~ 175°C |
|
|
TST20H200CW
|
DIODE SCHOTTKY 200V 10A TO220AB |
Taiwan Semiconductor Corporation |
TO-220-3 |
10A |
Schottky |
Through Hole |
TO-220AB |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 200V |
|
930mV @ 10A |
200V |
|
-55°C ~ 150°C |
|
|
SFA1002GHC0G
|
DIODE GEN PURP 100V 10A TO220AC |
Taiwan Semiconductor Corporation |
TO-220-2 |
10A |
Standard |
Through Hole |
TO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 100V |
70pF @ 4V, 1MHz |
975mV @ 10A |
100V |
35ns |
-55°C ~ 150°C |
Automotive, AEC-Q101 |
|
GPAS1006 MNG
|
DIODE GEN PURP 800V 10A TO263AB |
Taiwan Semiconductor Corporation |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A |
Standard |
Surface Mount |
TO-263AB (D²PAK) |
Standard Recovery >500ns, > 200mA (Io) |
5µA @ 800V |
50pF @ 4V, 1MHz |
1.1V @ 10A |
800V |
|
-55°C ~ 150°C |
|
|
SF1004GHC0G
|
DIODE GEN PURP 200V 10A TO220AB |
Taiwan Semiconductor Corporation |
TO-220-3 |
10A |
Standard |
Through Hole |
TO-220AB |
Fast Recovery =< 500ns, > 200mA (Io) |
10µA @ 200V |
70pF @ 4V, 1MHz |
975mV @ 5A |
200V |
35ns |
-55°C ~ 150°C |
Automotive, AEC-Q101 |
|
TPMR10D S1G
|
DIODE GEN PURP 200V 10A TO277A |
Taiwan Semiconductor Corporation |
TO-277, 3-PowerDFN |
10A |
Standard |
Surface Mount |
TO-277A (SMPC) |
Fast Recovery =< 500ns, > 200mA (Io) |
5µA @ 200V |
140pF @ 4V, 1MHz |
950mV @ 10A |
200V |
35ns |
-55°C ~ 175°C |
|
|
MBRB1050-E3/81
|
DIODE SCHOTTKY 50V 10A TO263AB |
Vishay General Semiconductor - Diodes Division |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
10A |
Schottky |
Surface Mount |
TO-263AB (D²PAK) |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 50V |
|
800mV @ 10A |
50V |
|
-65°C ~ 150°C |
|
|
MBRF10H60-E3/45
|
DIODE SCHOTTKY 60V 10A ITO220AC |
Vishay General Semiconductor - Diodes Division |
TO-220-2 Full Pack, Isolated Tab |
10A |
Schottky |
Through Hole |
ITO-220AC |
Fast Recovery =< 500ns, > 200mA (Io) |
100µA @ 60V |
|
710mV @ 10A |
60V |
|
-65°C ~ 175°C |
|