• Средний выпрямленный ток (Io)
  • Производитель
Найдено: 1626
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Серия
SBR10E45P5-13 DIODE SBR 45V 10A POWERDI5 Diodes Incorporated PowerDI™ 5 10A Super Barrier Surface Mount PowerDI™ 5 Fast Recovery =< 500ns, > 200mA (Io) 280µA @ 45V 470mV @ 10A 45V -55°C ~ 150°C
PMEG100T100ELPEZ DIODE SCHOTTKY 100V 10A CFP15B Nexperia USA Inc. TO-277, 3-PowerDFN 10A Schottky Surface Mount CFP15B Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 100V 850pF @ 1V, 1MHz 810mV @ 10A 100V 22ns 175°C Automotive, AEC-Q101
NTS10100EMFST1G DIODE SCHOTTKY 100V 10A 5DFN onsemi 8-PowerTDFN, 5 Leads 10A Schottky Surface Mount 5-DFN (5x6) (8-SOFL) Fast Recovery =< 500ns, > 200mA (Io) 50µA @ 100V 720mV @ 10A 100V -55°C ~ 175°C
NRVTS10120EMFST3G DIODE SCHOTTKY 120V 10A 5DFN onsemi 8-PowerTDFN, 5 Leads 10A Schottky Surface Mount 5-DFN (5x6) (8-SOFL) Fast Recovery =< 500ns, > 200mA (Io) 30µA @ 120V 820mV @ 10A 120V -55°C ~ 175°C Automotive, AEC-Q101
SVM1045V2_R1_00001 LOW VF SCHOTTKY RECTIFIER Panjit International Inc. TO-277, 3-PowerDFN 10A Schottky Surface Mount TO-277 Fast Recovery =< 500ns, > 200mA (Io) 220µA @ 45V 860pF @ 4V, 1MHz 440mV @ 10A 45V -55°C ~ 150°C
SB1030_T0_00001 SCHOTTKY BARRIER RECTIFIERS Panjit International Inc. TO-220-2 10A Schottky Through Hole TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 200µA @ 30V 550mV @ 10A 30V -55°C ~ 125°C
RFX10TF6S DIODE GEN PURP 600V 10A TO220NFM Rohm Semiconductor TO-220-2 Full Pack 10A Standard Through Hole TO-220NFM Fast Recovery =< 500ns, > 200mA (Io) 10µA @ 600V 2.5V @ 10A 600V 30ns 150°C (Max)
TSP10H60S S1G DIODE SCHOTTKY 60V 10A TO277A Taiwan Semiconductor Corporation TO-277, 3-PowerDFN 10A Schottky Surface Mount TO-277A (SMPC) Fast Recovery =< 500ns, > 200mA (Io) 150µA @ 60V 640mV @ 10A 60V -55°C ~ 150°C
SFS1006GHMNG DIODE GEN PURP 400V 10A TO263AB Taiwan Semiconductor Corporation TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 10A Standard Surface Mount TO-263AB (D²PAK) Fast Recovery =< 500ns, > 200mA (Io) 1µA @ 400V 50pF @ 4V, 1MHz 1.3V @ 5A 400V 35ns -55°C ~ 150°C Automotive, AEC-Q101
MBR1035HC0G DIODE GEN PURP 35V 10A TO220AC Taiwan Semiconductor Corporation TO-220-2 10A Standard Through Hole TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 35V 700mV @ 10A 35V -55°C ~ 150°C Automotive, AEC-Q101
SFA1003GHC0G DIODE GEN PURP 150V 10A TO220AC Taiwan Semiconductor Corporation TO-220-2 10A Standard Through Hole TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 10µA @ 150V 70pF @ 4V, 1MHz 975mV @ 10A 150V 35ns -55°C ~ 150°C Automotive, AEC-Q101
SR1060 C0G DIODE SCHOTTKY 60V 10A TO220AB Taiwan Semiconductor Corporation TO-220-3 10A Schottky Through Hole TO-220AB Fast Recovery =< 500ns, > 200mA (Io) 500µA @ 60V 700mV @ 5A 60V -55°C ~ 150°C
SS10PH9HM3_A/H DIODE SCHOTTKY 90V 10A TO277A Vishay General Semiconductor - Diodes Division TO-277, 3-PowerDFN 10A Schottky Surface Mount TO-277A (SMPC) Fast Recovery =< 500ns, > 200mA (Io) 10µA @ 90V 270pF @ 4V, 1MHz 880mV @ 10A 90V -55°C ~ 175°C Automotive, AEC-Q101, eSMP®
10ETF12FP DIODE GEN PURP 1.2KV 10A TO220FP Vishay General Semiconductor - Diodes Division TO-220-2 Full Pack 10A Standard Through Hole TO-220AC Full Pack Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 1200V 1.33V @ 10A 1200V 310ns -40°C ~ 150°C
VS-10ETF04FPPBF DIODE GEN PURP 400V 10A TO220FP Vishay General Semiconductor - Diodes Division TO-220-2 Full Pack 10A Standard Through Hole TO-220-2 Full Pack Fast Recovery =< 500ns, > 200mA (Io) 1.2V @ 10A 400V 200ns -40°C ~ 150°C