Найдено: 6
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Технология
Рабочая температура
Ток утечки
Прямое напряжение
VJ448M BRIDGE RECT 1PHASE 400V 10A VJ Microsemi Corporation 4-Square, VJ 400V 10A Single Phase Through Hole VJ Standard -55°C ~ 175°C (TJ) 5µA @ 400V 1.3V @ 1A
VJ448XM BRIDGE RECT 1PHASE 400V 10A VJ Microsemi Corporation 4-Square, VJ 400V 10A Single Phase Through Hole VJ Standard -55°C ~ 150°C (TJ) 5µA @ 400V 1.3V @ 1A
VJ647M BRIDGE RECT 1PHASE 1.1KV 10A VJ Microsemi Corporation 4-Square, VJ 1.1kV 10A Single Phase Through Hole VJ Avalanche -55°C ~ 150°C (TJ) 5µA @ 1100V 1.3V @ 1A
VJ848M BRIDGE RECT 1PHASE 800V 10A VJ Microsemi Corporation 4-Square, VJ 800V 10A Single Phase Through Hole VJ Avalanche -55°C ~ 175°C (TJ) 5µA @ 800V 1.3V @ 1A
VJ248M BRIDGE RECT 1PHASE 200V 10A VJ Microsemi Corporation 4-Square, VJ 200V 10A Single Phase Through Hole VJ Standard 5µA @ 200V 1.3V @ 1A
VJ247M BRIDGE RECT 1PHASE 250V 10A VJ Microsemi Corporation 4-Square, VJ 250V 10A Single Phase Through Hole VJ Avalanche 5µA @ 700V 1.3V @ 1A