Найдено: 36
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Технология
Рабочая температура
Ток утечки
Прямое напряжение
KBU10005-G BRIDGE RECT 1PHASE 50V 10A KBU Comchip Technology 4-SIP, KBU 50V 10A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 10µA @ 50V 1V @ 5A
KBU1001-G BRIDGE RECT 1PHASE 100V 10A KBU Comchip Technology 4-SIP, KBU 100V 10A Single Phase Through Hole KBU Standard -55°C ~ 125°C (TJ) 10µA @ 100V 1V @ 5A
KBU1010 BRIDGE RECT 1PHASE 1KV 10A KBU GeneSiC Semiconductor 4-SIP, KBU 1kV 10A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 10µA @ 1000V 1.05V @ 10A
KBU1006 BRIDGE RECT 1PHASE 600V 10A KBU GeneSiC Semiconductor 4-SIP, KBU 600V 10A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 10µA @ 600V 1.05V @ 10A
KBU1002 BRIDGE RECT 1PHASE 200V 10A KBU GeneSiC Semiconductor 4-SIP, KBU 200V 10A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 10µA @ 200V 1.05V @ 10A
KBU1004G T0G BRIDGE RECT 1PHASE 400V 10A KBU Taiwan Semiconductor Corporation 4-SIP, KBU 400V 10A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 5µA @ 400V 1.1V @ 10A
KBU1007G BRIDGE RECT 1PHASE 1KV 10A KBU Taiwan Semiconductor Corporation 4-SIP, KBU 1kV 10A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 5µA @ 1000V 1.1V @ 10A
KBU1003G DIODE BRIDGE 10A 200V KBU Taiwan Semiconductor Corporation 4-SIP, KBU 200V 10A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 5µA @ 200V 1.1V @ 10A
KBU1005G T0G BRIDGE RECT 1PHASE 600V 10A KBU Taiwan Semiconductor Corporation 4-SIP, KBU 600V 10A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 5µA @ 600V 1.1V @ 10A
KBU1003G T0G BRIDGE RECT 1PHASE 200V 10A KBU Taiwan Semiconductor Corporation 4-SIP, KBU 200V 10A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 5µA @ 200V 1.1V @ 10A
KBU1005G T0 BRIDGE RECT 1PHASE 600V 10A KBU Taiwan Semiconductor Corporation 4-SIP, KBU 600V 10A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 5µA @ 600V 1.1V @ 10A
KBU1006G T0G BRIDGE RECT 1PHASE 800V 10A KBU Taiwan Semiconductor Corporation 4-SIP, KBU 800V 10A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1.1V @ 10A
KBU1006G T0 BRIDGE RECT 1PHASE 800V 10A KBU Taiwan Semiconductor Corporation 4-SIP, KBU 800V 10A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1.1V @ 10A
KBU1001G T0G BRIDGE RECT 1PHASE 50V 10A KBU Taiwan Semiconductor Corporation 4-SIP, KBU 50V 10A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 5µA @ 50V 1.1V @ 10A
KBU1010-A2-0000 RECT BRIDGE 1000V 10A KBU Yangzhou Yangjie Electronic Technology Co.,Ltd 4-ESIP, KBU 1kV 10A Single Phase Through Hole KBU Standard -55°C ~ 150°C (TJ) 10µA @ 1000V 1.1V @ 5A