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- Рабочая температура
- Ток утечки
- Прямое напряжение
- Серия
| Наименование | Описание | Производитель
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Package / Case
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Обратное пиковое напряжение
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Средний выпрямленный ток (Io)
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Тип диода
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Вид монтажа
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Тип корпуса
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Технология
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Рабочая температура
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Ток утечки
|
Прямое напряжение
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| KBU1008 | BRIDGE RECT 1PHASE 800V 10A KBU | GeneSiC Semiconductor | 4-SIP, KBU | 800V | 10A | Single Phase | Through Hole | KBU | Standard | -55°C ~ 150°C (TJ) | 10µA @ 800V | 1.05V @ 10A |
| KBU1004 | BRIDGE RECT 1PHASE 400V 10A KBU | GeneSiC Semiconductor | 4-SIP, KBU | 400V | 10A | Single Phase | Through Hole | KBU | Standard | -55°C ~ 150°C (TJ) | 10µA @ 400V | 1.05V @ 10A |
| KBU1001 | BRIDGE RECT 1PHASE 100V 10A KBU | GeneSiC Semiconductor | 4-SIP, KBU | 100V | 10A | Single Phase | Through Hole | KBU | Standard | -55°C ~ 150°C (TJ) | 10µA @ 100V | 1.05V @ 10A |
| KBU1004G T0 | BRIDGE RECT 1PHASE 400V 10A KBU | Taiwan Semiconductor Corporation | 4-SIP, KBU | 400V | 10A | Single Phase | Through Hole | KBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 10A |
| KBU1007G T0G | BRIDGE RECT 1PHASE 1KV 10A KBU | Taiwan Semiconductor Corporation | 4-SIP, KBU | 1kV | 10A | Single Phase | Through Hole | KBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 10A |
| KBU1003G T0 | BRIDGE RECT 1PHASE 200V 10A KBU | Taiwan Semiconductor Corporation | 4-SIP, KBU | 200V | 10A | Single Phase | Through Hole | KBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1.1V @ 10A |
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