Найдено: 6
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
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Тип корпуса
Технология
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Прямое напряжение
BU1506-M3/51 BRIDGE RECT 1P 600V 15A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 600V 15A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 600V 1.05V @ 7.5A
BU1506-M3/45 BRIDGE RECT 1P 600V 15A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 600V 15A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 600V 1.05V @ 7.5A
BU1510-M3/51 BRIDGE RECT 1P 1KV 15A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 1kV 15A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 1000V 1.05V @ 7.5A
BU1510-M3/45 BRIDGE RECT 1P 1KV 15A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 1kV 15A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 1000V 1.05V @ 7.5A
BU1508-M3/45 BRIDGE RECT 1P 800V 15A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 800V 15A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1.05V @ 7.5A
BU1508-M3/51 BRIDGE RECT 1P 800V 15A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 800V 15A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1.05V @ 7.5A