-
- Рабочая температура
- Ток утечки
- Прямое напряжение
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Обратное пиковое напряжение
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Технология
|
Рабочая температура
|
Ток утечки
|
Прямое напряжение
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BU1210-M3/51 | BRIDGE RECT 1P 1KV 12A BU | Vishay General Semiconductor - Diodes Division | 4-SIP, BU | 1kV | 12A | Single Phase | Through Hole | isoCINK+™ BU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.05V @ 6A |
| BU1210-M3/45 | BRIDGE RECT 1P 1KV 12A BU | Vishay General Semiconductor - Diodes Division | 4-SIP, BU | 1kV | 12A | Single Phase | Through Hole | isoCINK+™ BU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.05V @ 6A |
| BU1208-M3/45 | BRIDGE RECT 1P 800V 12A BU | Vishay General Semiconductor - Diodes Division | 4-SIP, BU | 800V | 12A | Single Phase | Through Hole | isoCINK+™ BU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 800V | 1.05V @ 6A |
| BU1208-M3/51 | BRIDGE RECT 1P 800V 12A BU | Vishay General Semiconductor - Diodes Division | 4-SIP, BU | 800V | 12A | Single Phase | Through Hole | isoCINK+™ BU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 800V | 1.05V @ 6A |
| BU1206-M3/51 | BRIDGE RECT 1P 600V 12A BU | Vishay General Semiconductor - Diodes Division | 4-SIP, BU | 600V | 12A | Single Phase | Through Hole | isoCINK+™ BU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1.05V @ 6A |
| BU1206-M3/45 | BRIDGE RECT 1P 600V 12A BU | Vishay General Semiconductor - Diodes Division | 4-SIP, BU | 600V | 12A | Single Phase | Through Hole | isoCINK+™ BU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1.05V @ 6A |
- 10
- 15
- 50
- 100