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- Рабочая температура
- Ток утечки
- Прямое напряжение
- Серия
| Наименование | Описание | Производитель
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Package / Case
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Обратное пиковое напряжение
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Средний выпрямленный ток (Io)
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Тип диода
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Вид монтажа
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Тип корпуса
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Технология
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Рабочая температура
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Ток утечки
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Прямое напряжение
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|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DB154G | BRIDGE RECT 1PHASE 400V 1.5A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 400V | 1.5A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 1.5A |
| DB156G | BRIDGE RECT 1PHASE 800V 1.5A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 800V | 1.5A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 5µA @ 800V | 1.1V @ 1.5A |
| DB153G | BRIDGE RECT 1PHASE 200V 1.5A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 200V | 1.5A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1.1V @ 1.5A |
| DB157G | BRIDGE RECT 1PHASE 1KV 1.5A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 1kV | 1.5A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 1.5A |
| DB151G | BRIDGE RECT 1PHASE 50V 1.5A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 50V | 1.5A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 5µA @ 50V | 1.1V @ 1.5A |
| DB152G | BRIDGE RECT 1PHASE 100V 1.5A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 100V | 1.5A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 5µA @ 100V | 1.1V @ 1.5A |
| DB155G | BRIDGE RECT 1PHASE 600V 1.5A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 600V | 1.5A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1.1V @ 1.5A |
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