Найдено: 12
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Технология
Рабочая температура
Ток утечки
Прямое напряжение
CBR10A-J020 BRIDGE RECT 1PHASE 200V 10A CM Central Semiconductor Corp 4-Square, CM 200V 10A Single Phase Through Hole CM Avalanche 10µA @ 200V 1.2V @ 5A
CBR10A-J060 BRIDGE RECT 1PHASE 600V 10A CM Central Semiconductor Corp 4-Square, CM 600V 10A Single Phase Through Hole CM Avalanche 10µA @ 600V 1.2V @ 5A
CBR10F-J010 BRIDGE RECT 1PHASE 100V 10A CM Central Semiconductor Corp 4-Square, CM 100V 10A Single Phase Through Hole CM Standard 10µA @ 100V 1.3V @ 5A
CBR10F-J020 BRIDGE RECT 1PHASE 200V 10A CM Central Semiconductor Corp 4-Square, CM 200V 10A Single Phase Through Hole CM Standard 10µA @ 200V 1.3V @ 5A
CBR10F-J060 BRIDGE RECT 1PHASE 600V 10A CM Central Semiconductor Corp 4-Square, CM 600V 10A Single Phase Through Hole CM Standard 10µA @ 600V 1.3V @ 5A
CBR10F-J080 BRIDGE RECT 1PHASE 800V 10A CM Central Semiconductor Corp 4-Square, CM 800V 10A Single Phase Through Hole CM Standard 10µA @ 800V 1.3V @ 5A
CBR10F-J100 BRIDGE RECT 1PHASE 1KV 10A CM Central Semiconductor Corp 4-Square, CM 1kV 10A Single Phase Through Hole CM Standard 10µA @ 1000V 1.3V @ 5A
CBR10F-J040 BRIDGE RECT 1PHASE 400V 10A CM Central Semiconductor Corp 4-Square, CM 400V 10A Single Phase Through Hole CM Standard 10µA @ 400V 1.3V @ 5A
CBR10A-J040 BRIDGE RECT 1PHASE 400V 10A CM Central Semiconductor Corp 4-Square, CM 400V 10A Single Phase Through Hole CM Avalanche 10µA @ 400V 1.2V @ 5A
CBR10A-J080 BRIDGE RECT 1PHASE 800V 10A CM Central Semiconductor Corp 4-Square, CM 800V 10A Single Phase Through Hole CM Avalanche 10µA @ 800V 1.2V @ 5A
CBR10-J080 BRIDGE RECT 1PHASE 800V 10A CM Central Semiconductor Corp 4-Square, CM 800V 10A Single Phase Through Hole CM Standard -65°C ~ 150°C (TJ) 10µA @ 800V 1.2V @ 5A
CBR10A-J010 BRIDGE RECT 1PHASE 100V 10A CM Central Semiconductor Corp 100V 10A Single Phase CM Avalanche 10µA @ 100V 1.2V @ 5A