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- Рабочая температура
- Ток утечки
- Прямое напряжение
- Серия
| Наименование | Описание | Производитель
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Package / Case
|
Обратное пиковое напряжение
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Средний выпрямленный ток (Io)
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Тип диода
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Вид монтажа
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Тип корпуса
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Технология
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Рабочая температура
|
Ток утечки
|
Прямое напряжение
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BR106 | BRIDGE RECT 1P 600V 10A BR-10 | GeneSiC Semiconductor | 4-Square, BR-10 | 600V | 10A | Single Phase | Through Hole | BR-10 | Standard | -55°C ~ 150°C (TJ) | 10µA @ 600V | 1.1V @ 5A |
| BR102 | BRIDGE RECT 1P 200V 10A BR-10 | GeneSiC Semiconductor | 4-Square, BR-10 | 200V | 10A | Single Phase | Through Hole | BR-10 | Standard | -55°C ~ 150°C (TJ) | 10µA @ 200V | 1.1V @ 5A |
| BR1005 | BRIDGE RECT 1PHASE 50V 10A BR-10 | GeneSiC Semiconductor | 4-Square, BR-10 | 50V | 10A | Single Phase | Through Hole | BR-10 | Standard | -55°C ~ 150°C (TJ) | 10µA @ 50V | 1.1V @ 5A |
| BR1010 | BRIDGE RECT 1PHASE 1KV 10A BR-10 | GeneSiC Semiconductor | 4-Square, BR-10 | 1kV | 10A | Single Phase | Through Hole | BR-10 | Standard | -55°C ~ 150°C (TJ) | 10µA @ 1000V | 1.1V @ 5A |
| BR108 | BRIDGE RECT 1P 800V 10A BR-10 | GeneSiC Semiconductor | 4-Square, BR-10 | 800V | 10A | Single Phase | Through Hole | BR-10 | Standard | -55°C ~ 150°C (TJ) | 10µA @ 800V | 1.1V @ 5A |
| BR104 | BRIDGE RECT 1P 400V 10A BR-10 | GeneSiC Semiconductor | 4-Square, BR-10 | 400V | 10A | Single Phase | Through Hole | BR-10 | Standard | -55°C ~ 150°C (TJ) | 10µA @ 400V | 1.1V @ 5A |
| BR101 | BRIDGE RECT 1P 100V 10A BR-10 | GeneSiC Semiconductor | 4-Square, BR-10 | 100V | 10A | Single Phase | Through Hole | BR-10 | Standard | -55°C ~ 150°C (TJ) | 10µA @ 100V | 1.1V @ 5A |
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- 50
- 100