Найдено: 6
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Технология
Рабочая температура
Ток утечки
Прямое напряжение
CBR1-L100M BRIDGE RECT 1PHASE 1KV 1.5A B-M Central Semiconductor Corp 4-SIP 1kV 1.5A Single Phase Through Hole B-M Standard -65°C ~ 150°C (TJ) 10µA @ 1000V 1V @ 1A
CBR1-L010M PBFREE BRIDGE RECT 1PHASE 100V 1.5A B-M Central Semiconductor Corp 4-SIP 100V 1.5A Single Phase Through Hole B-M Standard -65°C ~ 150°C (TJ) 10µA @ 100V 1V @ 1A
CBR1-L040M BRIDGE RECT 1PHASE 400V 1.5A B-M Central Semiconductor Corp 4-SIP 400V 1.5A Single Phase Through Hole B-M Standard -65°C ~ 150°C (TJ) 10µA @ 400V 1V @ 1A
CBR1-L020M BRIDGE RECT 1PHASE 200V 1.5A B-M Central Semiconductor Corp 4-SIP 200V 1.5A Single Phase Through Hole B-M Standard -65°C ~ 150°C (TJ) 10µA @ 200V 1V @ 1A
CBR1-L060M PBFREE BRIDGE RECT 1PHASE 600V 1.5A B-M Central Semiconductor Corp 4-SIP 600V 1.5A Single Phase Through Hole B-M Standard -65°C ~ 150°C (TJ) 10µA @ 600V 1V @ 1A
CBR1-L080M BRIDGE RECT 1PHASE 800V 1.5A B-M Central Semiconductor Corp 4-SIP 800V 1.5A Single Phase Through Hole B-M Standard -65°C ~ 150°C (TJ) 10µA @ 800V 1V @ 1A