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- Рабочая температура
- Ток утечки
- Прямое напряжение
- Серия
Наименование | Описание | Производитель
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Package / Case
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Обратное пиковое напряжение
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Средний выпрямленный ток (Io)
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Тип диода
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Вид монтажа
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Тип корпуса
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Технология
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Рабочая температура
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Ток утечки
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Прямое напряжение
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CBR1-L100M | BRIDGE RECT 1PHASE 1KV 1.5A B-M | Central Semiconductor Corp | 4-SIP | 1kV | 1.5A | Single Phase | Through Hole | B-M | Standard | -65°C ~ 150°C (TJ) | 10µA @ 1000V | 1V @ 1A |
CBR1-L010M PBFREE | BRIDGE RECT 1PHASE 100V 1.5A B-M | Central Semiconductor Corp | 4-SIP | 100V | 1.5A | Single Phase | Through Hole | B-M | Standard | -65°C ~ 150°C (TJ) | 10µA @ 100V | 1V @ 1A |
CBR1-L040M | BRIDGE RECT 1PHASE 400V 1.5A B-M | Central Semiconductor Corp | 4-SIP | 400V | 1.5A | Single Phase | Through Hole | B-M | Standard | -65°C ~ 150°C (TJ) | 10µA @ 400V | 1V @ 1A |
CBR1-L020M | BRIDGE RECT 1PHASE 200V 1.5A B-M | Central Semiconductor Corp | 4-SIP | 200V | 1.5A | Single Phase | Through Hole | B-M | Standard | -65°C ~ 150°C (TJ) | 10µA @ 200V | 1V @ 1A |
CBR1-L060M PBFREE | BRIDGE RECT 1PHASE 600V 1.5A B-M | Central Semiconductor Corp | 4-SIP | 600V | 1.5A | Single Phase | Through Hole | B-M | Standard | -65°C ~ 150°C (TJ) | 10µA @ 600V | 1V @ 1A |
CBR1-L080M | BRIDGE RECT 1PHASE 800V 1.5A B-M | Central Semiconductor Corp | 4-SIP | 800V | 1.5A | Single Phase | Through Hole | B-M | Standard | -65°C ~ 150°C (TJ) | 10µA @ 800V | 1V @ 1A |
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