Найдено: 7
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Технология
Рабочая температура
Ток утечки
Прямое напряжение
DF202-G BRIDGE RECT 1PHASE 200V 2A 4-DF Comchip Technology 4-EDIP (0.321", 8.15mm) 200V 2A Single Phase Through Hole 4-DF Standard -55°C ~ 150°C (TJ) 10µA @ 200V 1.1V @ 2A
DF210-G BRIDGE RECT 1PHASE 1KV 2A 4-DF Comchip Technology 4-EDIP (0.321", 8.15mm) 1kV 2A Single Phase Through Hole 4-DF Standard -55°C ~ 150°C (TJ) 10µA @ 1000V 1.1V @ 2A
DF206-G BRIDGE RECT 1PHASE 600V 2A 4-DF Comchip Technology 4-EDIP (0.321", 8.15mm) 600V 2A Single Phase Through Hole 4-DF Standard -55°C ~ 150°C (TJ) 10µA @ 600V 1.1V @ 2A
DF2005-G BRIDGE RECT 1PHASE 50V 2A 4-DF Comchip Technology 4-EDIP (0.321", 8.15mm) 50V 2A Single Phase Through Hole 4-DF Standard -55°C ~ 150°C (TJ) 10µA @ 50V 1.1V @ 2A
DF208-G BRIDGE RECT 1PHASE 800V 2A 4-DF Comchip Technology 4-EDIP (0.321", 8.15mm) 800V 2A Single Phase Through Hole 4-DF Standard -55°C ~ 150°C (TJ) 10µA @ 800V 1.1V @ 2A
DF204-G BRIDGE RECT 1PHASE 400V 2A 4-DF Comchip Technology 4-EDIP (0.321", 8.15mm) 400V 2A Single Phase Through Hole 4-DF Standard -55°C ~ 150°C (TJ) 10µA @ 400V 1.1V @ 2A
DF201-G BRIDGE RECT 1PHASE 100V 2A 4-DF Comchip Technology 4-EDIP (0.321", 8.15mm) 100V 2A Single Phase Through Hole 4-DF Standard -55°C ~ 150°C (TJ) 10µA @ 100V 1.1V @ 2A