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Найдено: 21
Наименование Описание Производитель
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Технология
Рабочая температура
Ток утечки
Прямое напряжение
BU1008A5S-M3/45 BRIDGE RECT 1P 800V 10A BU-5S Vishay General Semiconductor - Diodes Division 4-SIP, BU-5S 800V 10A Single Phase Through Hole isoCINK+™ BU-5S Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1.1V @ 5A
BU1010-M3/51 BRIDGE RECT 1P 1KV 10A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 1kV 10A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 1000V 1.05V @ 5A
VSIB10A60-E3/45 BRIDGE RECT 1P 600V 10A GSIB-5S Vishay General Semiconductor - Diodes Division 4-SIP, GSIB-5S 600V 10A Single Phase Through Hole GSIB-5S Standard -55°C ~ 150°C (TJ) 10µA @ 600V 1V @ 5A
BU1006-M3/51 BRIDGE RECT 1P 600V 10A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 600V 10A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 600V 1.05V @ 5A
BU1008-M3/45 BRIDGE RECT 1P 800V 10A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 800V 10A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1.05V @ 5A
BU1010A-M3/45 BRIDGE RECT 1P 1KV 10A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 1kV 10A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 1000V 1.1V @ 5A
BU1006A-M3/51 BRIDGE RECT 1P 600V 10A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 600V 10A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 10µA @ 600V 1.1V @ 5A
BU10085S-M3/45 BRIDGE RECT 1P 800V 10A BU-5S Vishay General Semiconductor - Diodes Division 4-SIP, BU-5S 800V 10A Single Phase Through Hole isoCINK+™ BU-5S Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1.05V @ 5A
BU1010A-M3/51 BRIDGE RECT 1P 1KV 10A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 1kV 10A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 1000V 1.1V @ 5A
VSIB10A40-E3/45 BRIDGE RECT 1P 400V 10A GSIB-5S Vishay General Semiconductor - Diodes Division 4-SIP, GSIB-5S 400V 10A Single Phase Through Hole GSIB-5S Standard -55°C ~ 150°C (TJ) 10µA @ 400V 1V @ 5A
BU1010-M3/45 BRIDGE RECT 1P 1KV 10A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 1kV 10A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 1000V 1.05V @ 5A
BU1008A-M3/51 BRIDGE RECT 1P 800V 10A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 800V 10A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1.1V @ 5A
BU1008-M3/51 BRIDGE RECT 1P 800V 10A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 800V 10A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1.05V @ 5A
BU1010A5S-M3/45 BRIDGE RECT 1P 1KV 10A BU-5S Vishay General Semiconductor - Diodes Division 4-SIP, BU-5S 1kV 10A Single Phase Through Hole isoCINK+™ BU-5S Standard -55°C ~ 150°C (TJ) 5µA @ 1000V 1.1V @ 5A
BU1006A5S-M3/45 BRIDGE RECT 1P 600V 10A BU-5S Vishay General Semiconductor - Diodes Division 4-SIP, BU-5S 600V 10A Single Phase Through Hole isoCINK+™ BU-5S Standard -55°C ~ 150°C (TJ) 10µA @ 600V 1.1V @ 5A
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