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- Рабочая температура
- Ток утечки
- Прямое напряжение
- Серия
| Наименование | Описание | Производитель
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Package / Case
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Обратное пиковое напряжение
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Средний выпрямленный ток (Io)
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Тип диода
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Вид монтажа
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Тип корпуса
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Технология
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Рабочая температура
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Ток утечки
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Прямое напряжение
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| BU1006A-M3/45 | BRIDGE RECT 1P 600V 10A BU | Vishay General Semiconductor - Diodes Division | 4-SIP, BU | 600V | 10A | Single Phase | Through Hole | isoCINK+™ BU | Standard | -55°C ~ 150°C (TJ) | 10µA @ 600V | 1.1V @ 5A |
| VSIB10A80-E3/45 | BRIDGE RECT 1P 800V 10A GSIB-5S | Vishay General Semiconductor - Diodes Division | 4-SIP, GSIB-5S | 800V | 10A | Single Phase | Through Hole | GSIB-5S | Standard | -55°C ~ 150°C (TJ) | 10µA @ 800V | 1V @ 5A |
| BU10105S-M3/45 | BRIDGE RECT 1P 1KV 10A BU-5S | Vishay General Semiconductor - Diodes Division | 4-SIP, BU-5S | 1kV | 10A | Single Phase | Through Hole | isoCINK+™ BU-5S | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.05V @ 5A |
| VSIB10A20-E3/45 | BRIDGE RECT 1P 200V 10A GSIB-5S | Vishay General Semiconductor - Diodes Division | 4-SIP, GSIB-5S | 200V | 10A | Single Phase | Through Hole | GSIB-5S | Standard | -55°C ~ 150°C (TJ) | 10µA @ 200V | 1V @ 5A |
| BU1008A-M3/45 | BRIDGE RECT 1P 800V 10A BU | Vishay General Semiconductor - Diodes Division | 4-SIP, BU | 800V | 10A | Single Phase | Through Hole | isoCINK+™ BU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 800V | 1.1V @ 5A |
| BU1006-M3/45 | BRIDGE RECT 1P 600V 10A BU | Vishay General Semiconductor - Diodes Division | 4-SIP, BU | 600V | 10A | Single Phase | Through Hole | isoCINK+™ BU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1.05V @ 5A |
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