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- Рабочая температура
- Ток утечки
- Прямое напряжение
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Обратное пиковое напряжение
|
Средний выпрямленный ток (Io)
|
Тип диода
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Вид монтажа
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Тип корпуса
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Технология
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Рабочая температура
|
Ток утечки
|
Прямое напряжение
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTE5318 | R-SI BRIDGE 200V 4A | NTE Electronics, Inc | 4-ESIP | 200V | 4A | Single Phase | Through Hole | 4-SIP | Standard | -55°C ~ 125°C (TJ) | 10µA @ 200V | 1V @ 3A |
| NTE5320 | R-SI BRIDGE 1KV 4A | NTE Electronics, Inc | 4-ESIP | 1000V | 4A | Single Phase | Through Hole | 4-SIP | Standard | -55°C ~ 125°C (TJ) | 10µA @ 1000V | 1V @ 3A |
| NTE5319 | R-SI BRIDGE 600V 4A | NTE Electronics, Inc | 4-ESIP | 600V | 4A | Single Phase | Through Hole | 4-SIP | Standard | -55°C ~ 125°C (TJ) | 10µA @ 600V | 1V @ 3A |
| NTE5310 | R-SI BRIDGE 600V 4A | NTE Electronics, Inc | 4-ESIP | 600V | 4A | Single Phase | Through Hole | 4-SIP | Standard | -65°C ~ 125°C (TJ) | 10µA @ 600V | 1.1V @ 2A |
| NTE5309 | R-SI BRIDGE 200V 4A | NTE Electronics, Inc | 4-ESIP | 200V | 4A | Single Phase | Through Hole | 4-SIP | Standard | -65°C ~ 125°C (TJ) | 10µA @ 200V | 1.1V @ 2A |
| NTE5311 | R-SI BRIDGE 1000V 4A | NTE Electronics, Inc | 4-ESIP | 1000V | 4A | Single Phase | Through Hole | 4-SIP | Standard | -65°C ~ 125°C (TJ) | 10µA @ 1000V | 1.1V @ 2A |
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