Найдено: 9
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Технология
Рабочая температура
Ток утечки
Прямое напряжение
NTE5390 R-SI BRIDGE 200V 35A NTE Electronics, Inc 4-ESIP 200V 35A Single Phase Through Hole 4-SIP Standard -55°C ~ 150°C (TJ) 5µA @ 200V 1.1V @ 17.5A
NTE5391 R-SI BRIDGE 400V 35A NTE Electronics, Inc 4-ESIP 400V 35A Single Phase Through Hole 4-SIP Standard -55°C ~ 150°C (TJ) 5µA @ 400V 1.1V @ 17.5A
NTE53516 3-PHASE BRIDGE 1600V 35A NTE Electronics, Inc 4-Square 1600V 35A Three Phase QC Terminal Standard -40°C ~ 150°C (TJ) 10µA @ 1600V 1.19V @ 40A
NTE5392 R-SI BRIDGE 600V 35A NTE Electronics, Inc 4-ESIP 600V 35A Single Phase Through Hole 4-SIP Standard -55°C ~ 150°C (TJ) 5µA @ 600V 1.1V @ 17.5A
NTE5394 R-SI BRIDGE 1000V 35A NTE Electronics, Inc 4-ESIP 1000V 35A Single Phase Through Hole 4-SIP Standard -55°C ~ 150°C (TJ) 5µA @ 1000V 1.1V @ 17.5A
NTE53504 3-PHASE BRIDGE 400V 35A NTE Electronics, Inc 4-Square 400V 35A Three Phase QC Terminal Standard -40°C ~ 150°C (TJ) 10µA @ 400V 1.19V @ 40A
NTE53508 3-PHASE BRIDGE 800V 35A NTE Electronics, Inc 4-Square 800V 35A Three Phase QC Terminal Standard -40°C ~ 150°C (TJ) 10µA @ 800V 1.19V @ 40A
NTE53512 3-PHASE BRIDGE 1200V 35A NTE Electronics, Inc 4-Square 1200V 35A Three Phase QC Terminal Standard -40°C ~ 150°C (TJ) 10µA @ 1200V 1.19V @ 40A
NTE5393 R-SI BRIDGE 800V 35A NTE Electronics, Inc 4-ESIP 800V 35A Single Phase Through Hole 4-SIP Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1.1V @ 17.5A