Найдено: 10
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Технология
Рабочая температура
Ток утечки
Прямое напряжение
NTE5322W R-SI BRIDGE 200V 25A NTE Electronics, Inc 4-Square 200V 25A Single Phase Through Hole Standard -55°C ~ 125°C (TJ) 10µA @ 200V 1.2V @ 12.5A
NTE5324 R-SI BRIDGE 400V 25A NTE Electronics, Inc 4-Square 400V 25A Single Phase QC Terminal Standard -55°C ~ 125°C (TJ) 10µA @ 400V 1.1V @ 12.5A
NTE5322 R-SI BRIDGE 200V 25A NTE Electronics, Inc 4-Square 200V 25A Single Phase QC Terminal Standard -55°C ~ 125°C (TJ) 10µA @ 200V 1.1V @ 12.5A
NTE5328 R-SI BRIDGE 1000V 25A NTE Electronics, Inc 4-Square 1000V 25A Single Phase QC Terminal Standard -55°C ~ 125°C (TJ) 10µA @ 1000V 1.1V @ 12.5A
NTE5324W R-SI BRIDGE 400V 25A NTE Electronics, Inc 4-Square 400V 25A Single Phase Through Hole Standard -55°C ~ 125°C (TJ) 10µA @ 400V 1.2V @ 12.5A
NTE5327W R-SI BRIDGE 800V 25A NTE Electronics, Inc 4-Square 800V 25A Single Phase Through Hole Standard -55°C ~ 125°C (TJ) 10µA @ 800V 1.2V @ 12.5A
NTE5326W R-SI BRIDGE 600V 25A NTE Electronics, Inc 4-Square 600V 25A Single Phase Through Hole Standard -55°C ~ 125°C (TJ) 10µA @ 600V 1.2V @ 12.5A
NTE5328W R-SI BRIDGE 1000V 25A NTE Electronics, Inc 4-Square 1000V 25A Single Phase Through Hole Standard -55°C ~ 125°C (TJ) 10µA @ 1000V 1.2V @ 12.5A
NTE5327 R-SI BRIDGE 800V 25A NTE Electronics, Inc 4-Square 800V 25A Single Phase QC Terminal Standard -55°C ~ 125°C (TJ) 10µA @ 800V 1.1V @ 12.5A
NTE5326 R-SI BRIDGE 600V 25A NTE Electronics, Inc 4-Square 600V 25A Single Phase QC Terminal Standard -55°C ~ 125°C (TJ) 10µA @ 600V 1.1V @ 12.5A