- Производитель
- Обратное пиковое напряжение
- Средний выпрямленный ток (Io)
- Тип корпуса
-
- Рабочая температура
- Ток утечки
- Прямое напряжение
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Обратное пиковое напряжение
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Технология
|
Рабочая температура
|
Ток утечки
|
Прямое напряжение
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APTDF100H120G | BRIDGE RECT 1P 1.2KV 120A SP4 | Microsemi Corporation | SP4 | 1.2kV | 120A | Single Phase | Chassis Mount | SP4 | Standard | -40°C ~ 175°C (TJ) | 100µA @ 1200V | 3V @ 100A |
| MSDM100-18 | BRIDGE RECT 3P 1.8KV 100A M2-1 | Microsemi Corporation | Module | 1.8kV | 100A | Three Phase | Chassis Mount | M2-1 | Standard | -40°C ~ 150°C (TJ) | 500µA @ 1800V | 1.9V @ 300A |
| MSD100-08 | BRIDGE RECT 3PHASE 800V 100A M3 | Microsemi Corporation | SM3-20H | 800V | 100A | Three Phase | Chassis Mount | M3 | Standard | -40°C ~ 150°C (TJ) | 300µA @ 800V | 1.9V @ 300A |
| APTDF100H20G | BRIDGE RECT 1PHASE 200V 145A SP4 | Microsemi Corporation | SP4 | 200V | 145A | Single Phase | Chassis Mount | SP4 | Standard | -40°C ~ 150°C (TJ) | 250µA @ 200V | 1.1V @ 100A |
| APTDF100H60G | BRIDGE RECT 1PHASE 600V 135A SP4 | Microsemi Corporation | SP4 | 600V | 135A | Single Phase | Chassis Mount | SP4 | Standard | -40°C ~ 175°C (TJ) | 250µA @ 600V | 2V @ 100A |
| MT800 | BRIDGE RECT 1PHASE 800V 25A | Microsemi Corporation | Module | 800V | 25A | Single Phase | Chassis Mount | Standard | -65°C ~ 200°C (TJ) | 10µA @ 800V | 1.3V @ 25A | |
| APT40DC60HJ | BRIDGE RECT 1P 600V 40A SOT227 | Microsemi Corporation | SOT-227-4, miniBLOC | 600V | 40A | Single Phase | Chassis Mount | SOT-227 | Silicon Carbide Schottky | -55°C ~ 175°C (TJ) | 800µA @ 600V | 1.8V @ 40A |
| 681-3D, 3N, 3P | BRIDGE RECTIFIER | Microsemi Corporation | ||||||||||
| APT30DS20HJ | BRIDGE RECT 1P 200V 45A SOT227 | Microsemi Corporation | SOT-227-4, miniBLOC | 200V | 45A | Single Phase | Chassis Mount | SOT-227 | Standard | -55°C ~ 150°C (TJ) | 500µA @ 200V | 850mV @ 30A |
| APTDC40H1201G | BRIDGE RECT 1PHASE 1.2KV 40A SP1 | Microsemi Corporation | SP1 | 1.2kV | 40A | Single Phase | Chassis Mount | SP1 | Silicon Carbide Schottky | -40°C ~ 175°C (TJ) | 800µA @ 1200V | 1.8V @ 40A |
| 681-6D, 6N, 6P | BRIDGE RECTIFIER | Microsemi Corporation | ||||||||||
| APTDF100H1201G | BRIDGE RECT 1P 1.2KV 120A SP1 | Microsemi Corporation | SP1 | 1.2kV | 120A | Single Phase | Chassis Mount | SP1 | Standard | -40°C ~ 175°C (TJ) | 100µA @ 1200V | 3V @ 100A |
| 682-3 | BRIDGE RECTIFIER | Microsemi Corporation | ||||||||||
| APTDF100H100G | BRIDGE RECT 1PHASE 1KV 130A SP4 | Microsemi Corporation | SP4 | 1kV | 130A | Single Phase | Chassis Mount | SP4 | Standard | -40°C ~ 175°C (TJ) | 100µA @ 1000V | 2.7V @ 100A |
| MSD30-18 | BRIDGE RECT 3PHASE 1.8KV 30A | Microsemi Corporation | M1 | 1.8kV | 30A | Three Phase | QC Terminal | Standard | -40°C ~ 150°C (TJ) | 200µA @ 1800V | 1.6V @ 100A |
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